Understanding switching variability and random telegraph noise in resistive RAM

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2013, Pages

  Ambrogio, S ^a   Balatti, S ^a   Cubeta, A ^a   Calderoni, A ^b   Ramaswamy, N ^b   Ielmini, D ^a  

^a POLITECNICO DI MILANO   (Italy)

^b MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894317612     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2013.6724732     Document Type: Conference Paper

References (12)

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