Growth of highly conformal ruthenium-oxide thin films with enhanced nucleation by atomic layer deposition

Journal of Alloys and Compounds

Volumn 610, Issue , 2014, Pages 529-539

  Park, Ji Yoon ^a   Yeo, Seungmin ^a   Cheon, Taehoon ^a,b   Kim, Soo Hyun ^a   Kim, Min Kyu ^c   Kim, Hyungjun ^c   Hong, Tae Eun ^d   Lee, Do Joong ^e  

^a Yeungnam University   (South Korea)

^b Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

^c Yonsei University   (South Korea)

^d Korea Basic Science Institute (KBSI)   (South Korea)

^e Brown University   (United States)

Author keywords

Atomic layer deposition; Bottom electrode; Capacitor; Metallorganic precursor; Nucleation; Ruthenium oxide

Indexed keywords

ASPECT RATIO; CAPACITORS; DEPOSITION; ELECTRODES; FLOW RATE; METAL INSULATOR BOUNDARIES; NUCLEATION; ORGANOMETALLICS; OXIDE MINERALS; RUTHENIUM; RUTHENIUM ALLOYS; RUTHENIUM COMPOUNDS; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

BOTTOM ELECTRODES; DEPOSITION TEMPERATURES; HIGH DIELECTRIC CONSTANTS; METAL INSULATOR METAL CAPACITOR (MIM); METALLORGANIC PRECURSOR; REACTANT FLOW-RATES; RUTHENIUM OXIDE; TETRAGONAL STRUCTURE;

ATOMIC LAYER DEPOSITION;

EID: 84901982681     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2014.04.186     Document Type: Article

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