Nucleation and chemical transformation of RuO2 films grown on (100) Si substrates by atomic layer deposition

Chemical Vapor Deposition

Volumn 17, Issue 4-6, 2011, Pages 114-122

  Salaün, Amelie ^a,c   Newcomb, Simon B ^b   Povey, Ian M ^a   Salaün, Mathieu ^a   Keeney, Lynette ^a   O'Mahony, Aileen ^a   Pemble, Martyn E ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b Glebe Scientific Ltd Newport   (Ireland)

^c UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Atomic force microscopy; Atomic layer deposition; Copper diffusion barriers; Interconnect; Ruthenium oxide; Transmission electron microscopy; X ray diffraction

Indexed keywords

ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; CHEMICAL TRANSFORMATIONS; COPPER DIFFUSION BARRIERS; DEPOSITED LAYER; FORMING GAS; HIGHER TEMPERATURES; INTERCONNECT; RUTHENIUM OXIDE; SI SUBSTRATES; TRANSMISSION ELECTRON;

ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; DIFFRACTION; ELECTRONS; METAL ANALYSIS; MORPHOLOGY; RUTHENIUM; RUTHENIUM ALLOYS; SCANNING ELECTRON MICROSCOPY; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

RUTHENIUM COMPOUNDS;

EID: 79958138905     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.201006882     Document Type: Article

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