Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadiene Ru(0) as a seed layer for copper metallization

Thin Solid Films

Volumn 546, Issue , 2013, Pages 2-8

  Yeo, Seungmin ^a   Choi, Sang Hyeok ^a   Park, Ji Yoon ^a   Kim, Soo Hyun ^a   Cheon, Taehoon ^b   Lim, Byoung Yong ^c   Kim, Sunjung ^c  

^a Yeungnam University   (South Korea)

^b Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

^c University of Ulsan   (South Korea)

Author keywords

Atomic layer deposition; Nucleation; Ruthenium; Seed layer

Indexed keywords

ASPECT RATIO; ATOMS; COPPER; DEPOSITION; FILM GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR OXYGEN; NUCLEATION; OXYGEN SUPPLY; RUTHENIUM; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

1 ,3-CYCLOHEXADIENE; COPPER METALLIZATION; CRYSTALLINITIES; CU ELECTROPLATING; DEPOSITION TEMPERATURES; FILM RESISTIVITY; SEED LAYER; TRANSMISSION ELECTRON;

ATOMIC LAYER DEPOSITION;

EID: 84885308065     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.03.074     Document Type: Conference Paper

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