Electronic and structural properties of graphene-based metal-semiconducting heterostructures engineered by silicon intercalation

Carbon

Volumn 76, Issue , 2014, Pages 27-39

  Silly, M G ^a   D'Angelo, M ^b   Besson, A ^a   Dappe, Y J ^c   Kubsky, S ^a   Li, G ^a   Nicolas, F ^a   Pierucci, D ^a,d   Thomasset, M ^a  

^a SYNCHROTRON SOLEIL   (France)

^b SORBONNE UNIVERSITÉ   (France)

^c SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ   (France)

^d Universit Pierre et Marie Curie Paris 6   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; HETEROJUNCTIONS; IMAGING TECHNIQUES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON; SILICON; SILICON CARBIDE;

COMPETING PROCESS; COMPLEMENTARY TECHNIQUES; ELECTRONIC AND STRUCTURAL PROPERTIES; ELECTRONIC DECOUPLING; ELECTRONIC INTERACTIONS; HIGH-RESOLUTION PHOTOEMISSION SPECTROSCOPY; INTERMEDIATE STATE; MICROSCOPY IMAGING;

AMORPHOUS SILICON;

EID: 84901807262     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2014.04.033     Document Type: Article

References (58)

1. C. Persson, and U. Lindefelt Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap Phys Rev B 54 15 1996 10257 10260
2. R.J. Han, X.G. Xu, X.B. Hu, N.S. Yu, J.Y. Wang, and Y.L. Tian et al. Development of bulk SiC single crystal grown by physical vapor transport method Opt Mater 23 1-2 2003 415 420
3. P.G. Neudeck, S.L. Garverick, D.J. Spry, L.Y. Chen, G.M. Beheim, and M.J. Krasowski et al. Extreme temperature 6H-SiC JFET integrated circuit technology Phys Status Solidi A-Appl Mater Sci 206 10 2009 2329 2345
4. P. Godignon SiC materials and technologies for sensors development Silicon Carbide Relat Mater 2004 483 2005 1009 1014 (Pubitemid 47544611)
5. N.G. Wright, and A.B. Horsfall SiC sensors: a review J Phys D-Appl Phys 40 20 2007 6345 6354 (Pubitemid 350093021)
6. P. Avouris, and C. Dimitrakopoulos Graphene: synthesis and applications Mater Today 15 3 2012 86 97
7. D.V. Badami Graphitization of alpha-silicon carbide Nature 193 4815 1962 569 570
8. X.N. Xie, H.Q. Wang, A.T.S. Wee, and K.P. Loh The evolution of 3 × 3, 6 × 6, root 3 × root 3R30 degrees and 6 root 3 × 6 root 3R30 degrees superstructuves on 6H-SiC (0 0 0 1) surfaces studied by reflection high energy electron diffraction Surf Sci 478 1-2 2001 57 71 (Pubitemid 32335256)
9. K.I. Bolotin, K.J. Sikes, J. Hone, H.L. Stormer, and P. Kim Temperature-dependent transport in suspended graphene Phys Rev Lett 101 9 2008 096802
10. P. Avouris Graphene: electronic and photonic properties and devices Nano Lett 10 11 2010 4285 4294
11. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, M.I. Katsnelson, and I.V. Grigorieva et al. Two-dimensional gas of massless Dirac fermions in graphene Nature 438 7065 2005 197 200 (Pubitemid 41599867)
12. Y.B. Zhang, Y.W. Tan, H.L. Stormer, and P. Kim Experimental observation of the quantum Hall effect and Berry's phase in graphene Nature 438 7065 2005 201 204 (Pubitemid 41599868)
13. K.S. Novoselov, E. McCann, S.V. Morozov, V.I. Fal'ko, M.I. Katsnelson, and U. Zeitler et al. Unconventional quantum Hall effect and Berry's phase of 2 pi in bilayer graphene Nat Phys 2 3 2006 177 180 (Pubitemid 43553498)
14. C. Riedl, C. Coletti, and U. Starke Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation J Phys D-Appl Phys 43 37 2010 374009
15. A. Ouerghi, M.G. Silly, M. Marangolo, C. Mathieu, M. Eddrief, and M. Picher et al. Large-area and high-quality epitaxial graphene on off-axis SiC wafers ACS Nano 6 7 2012 6075 6082
16. J.B. Hannon, and R.M. Tromp Pit formation during graphene synthesis on SiC(0 0 0 1): in situ electron microscopy Phys Rev B 77 24 2008 241404
17. Q.Y. Wang, W.H. Zhang, L.L. Wang, K. He, X.C. Ma, and Q.K. Xue Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0 0 0 1) substrates J Phys-Condens Matter 25 9 2013 095002
18. S.Y. Zhou, G.H. Gweon, A.V. Fedorov, P.N. First, W.A. De Heer, and D.H. Lee et al. Substrate-induced bandgap opening in epitaxial graphene Nat Mater 6 10 2007 770 775 (Pubitemid 47511278)
19. T. Ohta, A. Bostwick, J.L. McChesney, T. Seyller, K. Horn, and E. Rotenberg Interlayer interaction and electronic screening in multilayer graphene investigated with angle-resolved photoemission spectroscopy Phys Rev Lett 98 20 2007 4
20. C. Riedl, C. Coletti, T. Iwasaki, A.A. Zakharov, and U. Starke Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation Phys Rev Lett 103 24 2009 246804
21. C. Mathieu, B. Lalmi, T.O. Mentes, E. Pallecchi, A. Locatelli, and S. Latil et al. Effect of oxygen adsorption on the local properties of epitaxial graphene on SiC(0 0 0 1) Phys Rev B 86 3 2012 035435
22. S. Oida, F.R. McFeely, J.B. Hannon, R.M. Tromp, M. Copel, and Z. Chen et al. Decoupling graphene from SiC(0 0 0 1) via oxidation Phys Rev B 82 4 2010 041411
23. S.L. Wong, H. Huang, Y.Z. Wang, L. Cao, D.C. Qi, and I. Santoso et al. Quasi-free-standing epitaxial graphene on SiC (0001) by fluorine intercalation from a molecular source ACS Nano 5 9 2011 7662 7668
24. A.L. Walter, K.J. Jeon, A. Bostwick, F. Speck, M. Ostler, and T. Seyller et al. Highly p-doped epitaxial graphene obtained by fluorine intercalation Appl Phys Lett 98 18 2011 184102
25. I. Gierz, T. Suzuki, R.T. Weitz, D.S. Lee, B. Krauss, and C. Riedl et al. Electronic decoupling of an epitaxial graphene monolayer by gold intercalation Phys Rev B 81 23 2010 235408
26. B. Premlal, M. Cranney, F. Vonau, D. Aubel, D. Casterman, and M.M. De Souza et al. Surface intercalation of gold underneath a graphene monolayer on SiC(0 0 0 1) studied by scanning tunneling microscopy and spectroscopy Appl Phys Lett 94 26 2009 263115
27. C. Virojanadara, A.A. Zakharov, S. Watcharinyanon, R. Yakimova, and L.I. Johansson A low-energy electron microscopy and X-ray photo-emission electron microscopy study of Li intercalated into graphene on SiC(0 0 0 1) New J Phys 12 2010 125015
28. C. Virojanadara, S. Watcharinyanon, A.A. Zakharov, and L.I. Johansson Epitaxial graphene on 6H-SiC and Li intercalation Phys Rev B 82 20 2010 205402
29. K.V. Emtsev, A.A. Zakharov, C. Coletti, S. Forti, and U. Starke Ambipolar doping in quasifree epitaxial graphene on SiC(0 0 0 1) controlled by Ge intercalation Phys Rev B 84 12 2011 125423
30. C. Xia, S. Watcharinyanon, A.A. Zakharov, R. Yakimova, L. Hultman, and L.I. Johansson et al. Si intercalation/deintercalation of graphene on 6H-SiC(0 0 0 1) Phys Rev B 85 4 2012 045418
31. F. Wang, K. Shepperd, J. Hicks, M.S. Nevius, H. Tinkey, and A. Tejeda et al. Silicon intercalation into the graphene-SiC interface Phys Rev B 85 16 2012 165449
32. S. Lizzit, R. Larciprete, P. Lacovig, M. Dalmiglio, F. Orlando, and A. Baraldi et al. Transfer-free electrical insulation of epitaxial graphene from its metal substrate Nano Lett 12 9 2012 4503 4507
33. 2/6H-SiC(0 0 0 1) 3 × 3 initial interface formation by Si overlayer oxidation Appl Phys Lett 75 21 1999 3360 3362 (Pubitemid 129564652)
34. Polack F, Silly M, Chauvet C, Lagarde B, Bergeard N, Izquierdo M, et al. TEMPO: a new insertion device beam line at SOLEIL for time resolved photoelectron spectroscopy experiments on solids and interfaces. In: 10th International Conference on Synchrotron Radiation Instrumentation. Melbourne, Australia. AIP Conf. Proc. 2010; 1234:185. http://dx.doi.org/10.1063/1.3463169.
35. N. Bergeard, M.G. Silly, D. Krizmancic, C. Chauvet, M. Guzzo, and J.P. Ricaud et al. Time-resolved photoelectron spectroscopy using synchrotron radiation time structure J Synchrotron Radiat 18 2011 245 250
36. S. Doniach, and M. Sunjic Many-electron singularity in X-ray photoemission and X-ray line spectra from metals J Phys C Solid State Phys 3 2 1970 285
37. F. Amy, H. Enriquez, P. Soukiassian, P.F. Storino, Y.J. Chabal, and A.J. Mayne et al. Atomic scale oxidation of a complex system: O-2/alpha-SiC(0 0 0 1)-(3 × 3) Phys Rev Lett 86 19 2001 4342 4345 (Pubitemid 32469552)
38. X.Y. Gao, S. Chen, T. Liu, W. Chen, A.T.S. Wee, and T. Nomoto et al. Si clusters on reconstructed SiC (0 0 0 1) revealed by surface extended X-ray absorption fine structure Appl Phys Lett 95 14 2009 144102
39. K.V. Emtsev, F. Speck, T. Seyller, L. Ley, and J.D. Riley Interaction, growth, and ordering of epitaxial graphene on SiC{0 0 0 1} surfaces: a comparative photoelectron spectroscopy study Phys Rev B 77 15 2008 155303
40. D. Wesner, and W. Eberhardt Photoemission and photoyield of amorphous Si films Phys Rev B 28 12 1983 7087 7093
41. L. Ley, D.A. Shirley, R. Pollak, and S. Kowalczy X-ray photoemission spectra of crystalline and amorphous Si and Ge valence bands Phys Rev Lett 29 16 1972 1088 1092
42. J.R. Chelikowsky, and M.L. Cohen Electronic-structure of silicon Phys Rev B 10 12 1974 5095 5107
43. J.H. Mao, L. Huang, Y. Pan, M. Gao, J.F. He, and H.T. Zhou et al. Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0 0 0 1) Appl Phys Lett 100 9 2012 093101
44. M. Sprinkle, D. Siegel, Y. Hu, J. Hicks, A. Tejeda, and A. Taleb-Ibrahimi et al. First direct observation of a nearly ideal graphene band structure Phys Rev Lett 103 22 2009 226803
45. L. Ju, B.S. Geng, J. Horng, C. Girit, M. Martin, and Z. Hao et al. Graphene plasmonics for tunable terahertz metamaterials Nat Nanotechnol 6 10 2011 630 634
46. E. Velez-Fort, C. Mathieu, E. Pallecchi, M. Pigneur, M.G. Silly, and R. Belkhou et al. Epitaxial graphene on 4H-SiC(0 0 0 1) grown under nitrogen flux: evidence of low nitrogen doping and high charge transfer ACS Nano 6 12 2012 10893 10900
47. 2 Nano Lett 8 12 2008 4320 4325
48. K.V. Emtsev, T. Seyller, F. Speck, L. Ley, P. Stojanov, and J.D. Riley et al. Initial stages of the Graphite-SiC(0 0 0 1) interface formation studied by photoelectron spectroscopy Silicon Carbide Relat Mater 2006 556-557 2007 525 528
49. Y. Qi, S.H. Rhim, G.F. Sun, M. Weinert, and L. Li Epitaxial graphene on SiC(0 0 0 1): more than just honeycombs Phys Rev Lett 105 8 2010 085502
50. W.J. Ong, and E.S. Tok Role of Si clusters in the phase transformation and formation of (6 × 6)-ring structures on 6H-SiC(0 0 0 1) as a function of temperature: an STM and XPS study Phys Rev B 73 4 2006 045330
51. 2/SiC interface formation from 25 to 650 degrees C Phys Rev B 65 16 2002 165323
52. N.F. Martinez, and R. Garcia Measuring phase shifts and energy dissipation with amplitude modulation atomic force microscopy Nanotechnology 17 7 2006 S167-S72
53. C. Lee, X.D. Wei, J.W. Kysar, and J. Hone Measurement of the elastic properties and intrinsic strength of monolayer graphene Science 321 5887 2008 385 388 (Pubitemid 352029970)
54. T.K. Hossain, S. MacLaren, J.M. Engel, C. Liu, I. Adesida, and R.S. Okojie The fabrication of suspended micromechanical structures from bulk 6H-SiC using an ICP-RIE system J Micromech Microeng 16 4 2006 751 756
55. T.P. Kaloni, M.U. Kahaly, Y.C. Cheng, and U. Schwingenschlogl Mechanism of Si intercalation in defective graphene on SiC J Mater Chem 22 44 2012 23340 23343
56. F. Varchon, P. Mallet, J.Y. Veuillen, and L. Magaud Ripples in epitaxial graphene on the Si-terminated SiC(0 0 0 1) surface Phys Rev B 77 23 2008 235412
57. S. Goler, C. Coletti, V. Piazza, P. Pingue, F. Colangelo, and V. Pellegrini et al. Revealing the atomic structure of the buffer layer between SiC(0 0 0 1) and epitaxial graphene Carbon 51 2013 249 254
58. K. Mortensen, D.M. Chen, P.J. Bedrossian, J.A. Golovchenko, and F. Besenbacher 2 reaction channels directly observed for atomic-hydrogen on the Si(1 1 1)-7 × 7 surface Phys Rev B 43 2 1991 1816 1819