Development of bulk SiC single crystal grown by physical vapor transport method

Optical Materials

Volumn 23, Issue 1-2, 2003, Pages 415-420

  Han, Rongjiang ^a   Xu, Xiangang ^a   Hu, Xiaobo ^a   Yu, Naisen ^a   Wang, Jiyang ^a   Tian, Yulian ^b   Huang, Wanxia ^b  

^a SHANDONG UNIVERSITY   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

Crystal growth; Defect; Semiconductor; SiC

Indexed keywords

GRAIN BOUNDARIES; OPTICAL MICROSCOPY; SILICON WAFERS; SINGLE CRYSTALS; X RAY DIFFRACTION;

PHYSICAL VAPOR TRANSPORT;

SILICON CARBIDE;

EID: 0037732657     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(02)00330-0     Document Type: Conference Paper

References (36)

1. Casady J.B., Johnson R.W. Solid-State Electron. 39:1996;1409.
2. Rottner K.et al. Mater. Sci. Eng. B. 61-62:1999;330.
3. Sriram S., Siergiej R.R., Clarke R.C., Agarwal A.K., Brandt C.D. Phys. Stat. Sol. (a). 162:1997;441.
4. Liu L., Edgar J.H. Mater. Sci. Eng. R. 37:2002;61.
5. Shaffer P.T.B. Acta Cryst. B. 25:1969;477.
6. Barrett D.L.et al. J. Cryst. Growth. 109:1991;17.
7. Lely J.A. Ber. Deut. Keram. Ges. 32:1955;229.
8. Tairov Yu.M., Tsvetkov V.F. J. Cryst. Growth. 43:1978;209.
9. Takahashi J., Kanaya M., Fujiwara Y. J. Cryst. Growth. 135:1994;61.
10. Schulze N., Barrett D., Pensl G. Phys. Stat. Sol. (a). 178:2000;645.
11. Furukawa K., Tajima Y., Saito H., Fujii Y., Suzuki A., Nakajima S. Jpn. J. Appl. Phys. 32:1993;L645.
12. Straubinger T.L.et al. J. Cryst. Growth. 240:2002;117.
13. Momeen, Khan M.Y. Cryst. Res. Technol. 30:1995;1127.
14. Kanaya M., Takahashi J., Fujiwara Y., Moritani A. Appl. Phys. Lett. 58:1991;56.
15. Augustine G.et al. Phys. Stat. Sol. (b). 202:1997;137.
16. Tairov Y.M., Tsvetkov V.F. Prog. Cryst. Growth Charact. 7:1983;111.
17. Yakimova R.et al. J. Cryst. Growth. 217:2000;255.
18. Rost H.-J.et al. Mater. Sci. Eng. B. 61-62:1999;68.
19. Stein R.A., Lanig P. J. Cryst. Growth. 131:1993;71.
20. Schulze N., Barrett D.L., Pensl G., Rohmfeld S., Hundhausen M. Mater. Sci. Eng. B. 61-62:1999;44.
21. Nakashima S., Harima H. Phys. Stat. Sol. (a). 162:1997;39.
22. Bluet J.M.et al. Mater. Sci. Eng. B. 61-62:1999;212.
23. Tuominen M., Yakimova R.et al. Mater. Sci. Eng. B. 57:1999;228.
24. Tuominen M.et al. Diamond Relat. Mater. 6:1997;1272.
25. Frank F.C. Acta Cryst. 4:1951;497.
26. Huang X.R.et al. Appl. Phys. Lett. 74:1999;353.
27. Dudley M.et al. J. Phys. D. 28:1995;A63.
28. Neudeck P.G. Mater. Sci. Forum. 338-342:2000;1161.
29. Dmitriev V.et al. Mater. Sci. Eng. B. 61-62:1999;446.
30. Carter C.H. Jr.et al. Mater. Sci. Eng. B. 61-62:1999;1.
31. Katsuno M.et al. J. Cryst. Growth. 216:2000;256.
32. Stein R.A. Physica B. 185:1993;211.
33. Kuhr T.A.et al. J. Appl. Phys. 89:2001;4625.
34. Jenny J.R.et al. J. Appl. Phys. 78:1995;3839.
35. Bickermann M.et al. J. Cryst. Gworth. 233:2001;211.
36. Jenny J.R.et al. Appl. Phys. Lett. 68:1996;1963.