Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates

Journal of Physics Condensed Matter

Volumn 25, Issue 9, 2013, Pages

  Wang, Qingyan ^a,b   Zhang, Wenhao ^b   Wang, Lili ^a   He, Ke ^a   Ma, Xucun ^a   Xue, Qikun ^a,b  

^a INSTITUTE OF PHYSICS   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING RATES; BI-LAYER; BILAYER GRAPHENE; DENSITY OF DEFECTS; FLASH ANNEALING; GRAPHENES; IN-SITU SCANNING TUNNELING MICROSCOPIES; PIT FORMATION; STEP EDGE; STEP STRUCTURE;

ANNEALING; CRYSTAL ATOMIC STRUCTURE; GRAPHENE; SCANNING TUNNELING MICROSCOPY;

SILICON CARBIDE;

EID: 84874103829     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/25/9/095002     Document Type: Article

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