Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 15, 1996, Pages 10257-10260

  Persson, C ^a   Lindefelt, U ^a  

^a ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001089894     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.10257     Document Type: Article

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