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Applied Physics Letters

Volumn 95, Issue 14, 2009, Pages

Si clusters on reconstructed SiC (0001) revealed by surface extended x-ray absorption fine structure

(9) Gao, Xingyu a Chen, Shi a Liu, Tao a Chen, Wei a Wee, A T S a Nomoto, T b Yagi, S b Soda, Kazuo b Yuhara, Junji b

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON YIELDS; EMISSION ANGLE; EPITAXIAL GRAPHENE; EXAFS; EXTENDED X-RAY ABSORPTION FINE STRUCTURES; SI CLUSTERS; SI-SI BONDS; SURFACE EXTENDED X-RAY ABSORPTION FINE STRUCTURES; SURFACE SENSITIVITY; X RAY PHOTOEMISSION SPECTROSCOPY;

ABSORPTION; ABSORPTION SPECTRA; EMISSION SPECTROSCOPY; GRAPHITE; SILICON; SILICON CARBIDE; SURFACE RECONSTRUCTION; X RAY ABSORPTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70349934296 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3242005 Document Type: Article

Times cited : (6)

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