Epitaxial graphene on 4H-SiC(0001) grown under nitrogen flux: Evidence of low nitrogen doping and high charge transfer

ACS Nano

Volumn 6, Issue 12, 2012, Pages 10893-10900

  Velez Fort, Emilio ^a,b   Mathieu, Claire ^a   Pallecchi, Emiliano ^a   Pigneur, Marine ^a   Silly, Mathieu G ^c   Belkhou, Rachid ^c   Marangolo, Massimiliano ^d   Shukla, Abhay ^b   Sirotti, Fausto ^c   Ouerghi, Abdelkarim ^a  

^a UNIV PARIS SUD   (France)

^b SORBONNE UNIVERSITÉ   (France)

^c SYNCHROTRON SOLEIL   (France)

^d INSTITUT DES NANOSCIENCES DE PARIS   (France)

Author keywords

electronic properties; epitaxial graphene; low energy electron microscopy; nitrogen doped; spectroscopy

Indexed keywords

ANGLE-RESOLVED PHOTOEMISSION; ATOMIC CONFIGURATION; CARBON HONEYCOMB; EFFECT OF DOPANTS; ELECTRICAL CONDUCTORS; EPITAXIAL GRAPHENE; FUNDAMENTAL RESEARCH; GRAPHENE PLANE; HIGH RESOLUTION; HIGH-RESOLUTION TRANSMISSION MICROSCOPIES; KEY FEATURE; LITHIUM STORAGES; LOW ENERGY ELECTRON MICROSCOPY; N-DOPED; NANOELECTRONIC DEVICES; NITROGEN ATOM; NITROGEN FLUXES; NITROGEN-DOPED; NITROGEN-DOPING; PRESSURE CONDITIONS;

ATOMS; BINDING ENERGY; CHARGE TRANSFER; DOPING (ADDITIVES); ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; LITHIUM; NANOELECTRONICS; NITROGEN; PHOTOELECTRONS; SILICON CARBIDE; SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GRAPHENE;

EID: 84871569057     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn304315z     Document Type: Article

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