Improvement of Al2O3 films on graphene grown by atomic layer deposition with Pre-H2O treatment

ACS Applied Materials and Interfaces

Volumn 6, Issue 10, 2014, Pages 7014-7019

  Zheng, Li ^a,b   Cheng, Xinhong ^a   Cao, Duo ^a,b   Wang, Gang ^a   Wang, Zhongjian ^a   Xu, Dawei ^a,b   Xia, Chao ^a,b   Shen, Lingyan ^a,b   Yu, Yuehui ^a   Shen, Dashen ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

Author keywords

gas solid absorption; graphene

Indexed keywords

ALUMINUM; DEPOSITION; FILM GROWTH; GRAPHENE;

ELECTRICAL FIELD; GAS-SOLID; PHYSICAL ADSORPTION; RELATIVE PERMITTIVITY; SURFACE FUNCTIONALIZATION; TEMPERATURE GROWTH; TRANSITION LAYERS;

ATOMIC LAYER DEPOSITION;

EID: 84901660232     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am501690g     Document Type: Article

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