Transferred wrinkled Al2O3 for highly stretchable and transparent graphene-carbon nanotube transistors

Nature Materials

Volumn 12, Issue 5, 2013, Pages 403-409

  Chae, Sang Hoon ^a   Yu, Woo Jong ^a,b   Bae, Jung Jun ^a   Duong, Dinh Loc ^a   Perello, David ^c   Jeong, Hye Yun ^a   Ta, Quang Huy ^a   Ly, Thuc Hue ^a   Vu, Quoc An ^a   Yun, Minhee ^c   Duan, Xiangfeng ^b   Lee, Young Hee ^a  

^a Sungkyunkwan University   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c PA 15260   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GRAPHENE;

DIELECTRIC LAYER; FUTURE APPLICATIONS; GATE-LEAKAGE CURRENT; INORGANIC DIELECTRICS; LOW OPERATING VOLTAGE; NANOTUBE TRANSISTORS; POLYMER DIELECTRICS; STRETCHABLE ELECTRONICS;

CARBON NANOTUBES;

EID: 84876693282     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat3572     Document Type: Article

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