Studies on H 2O-based atomic layer deposition of Al 2O 3 dielectric on pristine graphene

Wuji Cailiao Xuebao/Journal of Inorganic Materials

Volumn 27, Issue 9, 2012, Pages 956-960

  Zhang, You Wei ^a,b   Wan, Li ^a   Cheng, Xin Hong ^b   Wang, Zhong Jian ^b   Xia, Chao ^b   Cao, Duo ^b   Jia, Ting Ting ^b   Yu, Yue Hui ^b  

^a WENZHOU UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Al 2O 3 dielectrics; Atomic layer deposition; Graphene

Indexed keywords

ABSORBED WATER; AFM; AFM IMAGE; ATOMIC FORCE MICROSCOPE (AFM); ROOT MEAN SQUARE ROUGHNESS; SIGNIFICANT IMPACTS;

ALUMINUM; ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; FILM GROWTH; GRAPHENE; MOLECULES; MORPHOLOGY; PHOTOELECTRONS; RAMAN SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

EID: 84867589025     PISSN: 1000324X     EISSN: None     Source Type: Journal    
DOI: 10.3724/SP.J.1077.2012.11663     Document Type: Article

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