Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene

Nano Letters

Volumn 11, Issue 9, 2011, Pages 3601-3607

  Hollander, Matthew J ^a   Labella, Michael ^a   Hughes, Zachary R ^a   Zhu, Michael ^a,b   Trumbull, Kathleen A ^a   Cavalero, Randal ^a   Snyder, David W ^a   Wang, Xiaojun ^a   Hwang, Euichul ^b   Datta, Suman ^b   Robinson, Joshua A ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

Author keywords

Al2O3; atomic layer deposition; epitaxial graphene; field effect transistor; gate dielectric; Graphene; HfO2; physical vapor deposition; SiO2

Indexed keywords

AL2O3; ATOMIC LAYER; EPITAXIAL GRAPHENE; FIELD EFFECTS; HFO2; SIO2;

ATOMIC LAYER DEPOSITION; ATOMS; DEPOSITION; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GRAPHENE; HAFNIUM OXIDES; HALL MOBILITY; PHYSICAL VAPOR DEPOSITION; SILICA; TRANSISTORS;

GATE DIELECTRICS;

EID: 80052794686     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl201358y     Document Type: Article

References (37)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films Science 2004, 306, 666-669 (Pubitemid 39440910)
2. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-dimensional gas of massless Dirac fermions in graphene Nature 2005, 438, 197-200 (Pubitemid 41599867)
3. Akturk, A.; Goldsman, N. Electron transport and full-band electron-phonon interactions in graphene J. Appl. Phys. 2008, 103, 053702
4. Murali, R.; Yan, Y.; Brenner, K.; Beck, T.; Meindl, J. D. Breakdown Current Density of Graphene Nanoribbons Appl. Phys. Lett. 2009, 94, 2434114
5. Zhang, Q.; Lu, Y.; Xing, H. G.; Koester, S. J.; Koswatta, S. O. Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons IEEE Electron Device Lett. 2010, 31, 531-533
6. Meric, I.; Han, M. Y.; Young, A. F.; Ozylimaz, B.; Kim, P.; Shepard, K. L. Current saturation in zero-bandgap, top-gated graphene field-effect transistors Nat. Nanotechnol. 2008, 3, 654-659
7. Moon, J. S.; Curtis, D.; Bui, S.; Hu, M.; Gaskill, D. K.; Tedesco, J. L.; Asbeck, P.; Jernigan, G. G.; VanMil, B. L.; Myers-Ward, R. L.; Eddy, C. R.; Campbell, P.,M.; Weng, X. Top-gated epitaxial graphene FETs on Si-face SiC wafers with a peak transconductance of 600mS/mm IEEE Electron Device Lett. 2010, 31, 260-262
8. Moon, J. S.; Curtis, D.; Zehnder, D.; Kim, S.; Gaskill, K.; Jernigan, G. G.; Myers-Ward, R. L.; Eddy, C. R.; Campbell, P. M.; Lee, K.-M.; Asbeck, P. Low-Phase Noise Graphene FETs in Ambipolar RF Applications IEEE Electron Device Lett. 2011, 32, 270-272
9. Lin, Y. M.; Dimitrakopoulos, C.; Jenkins, K. A.; Farmer, D. B.; Chiu, H. Y.; Grill, A.; Avouris, P. 100-Ghz transistors from wafer-scale epitaxial graphene Science 2010, 327, 662
10. Wu, Y. Q.; Ye, P. D.; Capano, M. A.; Xuan, Y.; Sui, Y.; Qi, M.; Cooper, J. A.; Shen, T.; Pandey, D.; Prakash, G.; Reifenberger, R. Top-gated graphene field-effect-transistors formed by decomposition of SiC Appl. Phys. Lett. 2008, 92, 092102
11. Kedzierski, J.; Hsu, P.-L.; Healy, P.; Wyatt, P. W.; Keast, C. L.; Sprinkle, M.; Berger, C.; de Heer, W. A. Epitaxial Graphene Transistors on SiC Substrates IEEE Trans. Electron Devices 2008, 55, 2078-2085
12. 3 Dielectric Layer Deposited by Atomic Layer Deposition for Graphene-based Nanoelectronics Appl. Phys. Lett. 2008, 92, 203102
13. Lin, Y. M.; Jenkins, K. A.; Valdes-Garcia, A.; Small, J. P.; Farmer, D. B.; Avouris, Ph. Operation of Graphene Transistors at Gigahertz Frequencies Nano Lett. 2009, 9, 422
14. Wang, X.; Tabakman, S. M.; Dai, H. Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene J. Am. Chem. Soc. 2008, 130, 8152
15. 3 dielectric Appl. Phys. Lett. 2009, 94, 062107
16. Xu, H.; Zhang, Z.; Wang, Z.; Wang, S.; Liang, X.; Peng, L. M. Quantum Capacitance Limited Vertical Scaling of Graphene Field-Effect Transistor ACS Nano 2011, 5, 2340-2347
17. Farmer, D. B.; Chiu, H. Y.; Lin, Y. M.; Jenkins, K. A.; Xia, F.; Avouris, P. Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors Nano Lett. 2009, 9, 4474-4478
18. Liao, L.; Bai, J.; Qu, Y.; Lin, Y. C.; Li, Y.; Huang, Y.; Duan, X. High-k oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors Appl. Phys. Sci. 2010, 107, 6711-6715
19. Liao, L.; Lin, Y. C.; Bao, M.; Cheng, R.; Bai, J.; Liu, Y.; Qu, Y.; Wang, K. L.; Huang, Y.; Duan, X. High-speed graphene transistors with a self-aligned nanowire gate Nature 2010, 467, 305-308
20. 2 top dielectric Appl. Phys. Lett. 2010, 97, 123105
21. Robinson, J. A.; Labella, M.; Trumball, K. A.; Weng, X. J.; Cavelero, R.; Daniels, T.; Hughes, Z.; Hollander, M. J.; Fanton, M.; Snyder, D. Epitaxial Graphene Materials Integration: Effects of Dielectric Overlayers on Structural and Electronic Properties ACS Nano 2010, 4, 2667-2672
22. Hwang, E. H.; Sarma, S. D. Dielectric function, screening, and plasmons in two dimensional graphene Phys. Rev. B 2007, 75, 205418
23. Konar, A.; Fang, T.; Jena, D. Effect of high-k gate dielectrics on charge transport in graphene-based field effect transistors Phys. Rev. B 2010, 82, 115452
24. Ponomarenko, L. A.; Yang, R.; Mohiuddin, T. M.; Katsnelson, M. I.; Novoselov, K. S.; Morozov, S. V.; Zhukov, A. A.; Schedin, F.; Hill, E. W.; Geim, A. K. Effect of a High-k Environment on Charge Carrier Mobility in Graphene Phys. Rev. Lett. 2009, 102, 206603
25. Chen, F.; Xia, J.; Ferry, D. K.; Tao, N. Dielectric screening enhanced performance in graphene FET Nano Lett. 2009, 9, 2571-2574
26. Jang, C.; Adam, S.; Chen, J.-H.; Williams, E. D.; Sarma, S. D.; Fuhrer, M. S. Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering Phys. Rev. Lett. 2008, 101, 146805
27. Robinson, J. A.; Wetherington, M.; Tedesco, J. L.; Campbell, P. M.; Weng, X.; Stitt, J.; Fanton, M.; Frantz, E.; Snyder, D.; VanMil, B. L.; Jernigan, G. G.; Meyers-Ward, R. L.; Eddy, C. R.; Gaskill, D. K. Correlating raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale Nano Lett. 2009, 9, 2873-2876
28. Robinson, J. A.; LaBella, M.; Zhu, M.; Hollander, M. J.; Kasarda, R.; Hughes, Z.; Trumbull, K.; Cavalero, R.; Snyder, D. Contacting graphene Appl. Phys. Lett. 2011, 98, 053103
29. Xia, J. L.; Chen, F.; Wektor, P.; Ferry, D. K.; Tao, N. J. Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications Nano Lett. 2010, 10, 5060-5064
30. Tedesco, J. L.; VanMil, B. L.; Myers-Ward, R. L.; McCrate, J. M.; Kitt, S. A.; Campbell, P. M.; Jernigan, G. G.; Culberston, J. C.; Eddy, J. R.; Gaskill, D. K. Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide Appl. Phys. Lett. 2009, 95, 1221202
31. Varchon, F.; Feng, R.; Hass, J.; Li, X.; Ngoc Nguyen, B.; Naud, C.; Mallet, P.; Veuillen, J.-Y.; Berger, C.; Conrad, E. H.; Magaud, L. Electronic Structure of Epitaxial Graphene Layers on SiC: Effect of the Substrate Phys. Rev. Lett. 2007, 99, 126805
32. Guha, S.; Narayanan, V. Oxygen Vacancies in High Dielectric Constant Oxide-Semiconductor Films Phys. Rev. Lett. 2007, 98, 196101
33. Patrick, L.; Choyke, W. J. Static Dielectric Constant of SiC Phys. Rev. B 1970, 2, 2255-2256
34. Schroder, D. K. Semiconductor Material and Device Characterization; John Wiley & Sons, Inc.: Hoboken, NJ, 2006.
35. Zhu, J.; Jhaveri, R.; Woo, J. C. S. The effect of traps on the performance of graphene field-effect transistors Appl. Phys. Lett. 2010, 96, 193503
36. Zebrev, G. I.; Melnik, E. V.; Tselykovskiy, A. A. Quantum Capacitance vs Chemical Potential Universal Curve and Interface Trap Parameter Extraction in Graphene Gated Structures. Condens. Matter: Mesoscale Nanoscale Phys. 2010, not supplied.
37. Shah, R.; Mohiuddin, T. M. Charge Carrier Mobility Degradation in Graphene Sheet Under Induced Strain. Condens. Matter: Mesoscale Nanoscale Phys. 2010, not supplied.