Optimum channel thickness in pentacene-based thin-film transistors

Applied Physics Letters

Volumn 82, Issue 23, 2003, Pages 4169-4171

  Lee, Jiyoul ^a   Kim, Kibum ^a   Kim, Jae Hoon ^a   Im, Seongil ^a   Jung, Duk Young ^b  

^a Yonsei University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRODES; EVAPORATION; GATES (TRANSISTOR); HOLE MOBILITY; LEAKAGE CURRENTS; OPTIMIZATION;

THERMAL EVAPORATION;

THIN FILM TRANSISTORS;

EID: 0038166414     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1580993     Document Type: Article

References (16)

1. J. G. Laquindanum, H. E. Katz, A. J. Lovinger, and A. Dodabalapur. Chem. Mater. 8, 2542 (1996).
2. J. Cornil, J. P. Calbert, and J. L. Bredas, J. Am. Chem. Soc. 123, 1250 (2001).
3. T. Siegrist, C. Kloc, J. H. Schön, B. Batlogg, R. C. Haddon, S. Berg, and G. A. Thomas, Angew. Chem. Int. Ed. Engl. 40, 1732 (2001).
4. Y. Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson. IEEE Trans. Electron Devices 44, 1325 (1997).
5. T. N. Jackson, Y.-Y. Lin, D. J. Gundlach, and H. Klauk. IEEE J. Sci. Top. Quantum Electron. 4, 100 (1998).
6. H. Klauk, D. J. Gundlach, J. A. Nicholas, and T. N. Jackson. IEEE Trans. Electron Devices 46, 1258 (1999).
7. S. S. Kim, Y. S. Choi, Kibum Kim, J. H. Kim, and S. Im, Appl. Phys. Lett. 82, 639 (2003).
8. D. J. Gundlach, L. L. Jia, and T. N. Jackson, IEEE Electron Device Lett. 22, 571 (2001).
9. C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw. Science (Washington, DC. U.S.) 283, 822 (1999).
10. M. H. Choo, J. H. Kim, and S. Im, Appl. Phys. Lett. 81, 4640 (2002).
11. J. Lee, J. H. Kim, and S. Im (unpublished).
12. N. L. Jeon, P. Clem, D. Y. Jung, W. Lin, G. S. Girolami, D. A. Payne, and R. G. Nuzzo, Adv. Mater. (Weinheim. Ger.) 9, 891 (1997).
13. G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, J. Appl. Phys. 87, 4456 (2000).
14. A. Dodabalapur, L. Torsi, and H. E. Kate, Science (Washington. DC. U.S.) 268, 270 (1995).
15. S. P. Park, S. S. Kim, J. H. Kim, C. N. Whang, and S. Im, Appl. Phys. Lett. 80, 2872 (2002).
16. D. Knipp, R. A. Street, A. Völkel, and J. Ho, J. Appl. Phys. 93, 347 (2003).