A new resist for area selective atomic and molecular layer deposition on metal-dielectric patterns

Journal of Physical Chemistry C

Volumn 118, Issue 20, 2014, Pages 10957-10962

  Hashemi, Fatemeh Sadat Minaye ^a   Prasittichai, Chaiya ^a   Bent, Stacey F ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COPPER; DEPOSITION; METALLIC COMPOUNDS; SELF ASSEMBLED MONOLAYERS; X RAY PHOTOELECTRON SPECTROSCOPY;

AREA SELECTIVE; CU SURFACES; METAL OXIDES; MOLECULAR LAYER DEPOSITION; MOLECULAR LAYER DEPOSITIONS (MLD); OCTADECYLPHOSPHONIC ACIDS; POLYUREAS; RESIST LAYERS;

ATOMIC LAYER DEPOSITION;

EID: 84901298406     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp502669f     Document Type: Article

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