Optical properties of an octadecylphosphonic acid self-assembled monolayer on a silicon wafer

Thin Solid Films

Volumn 517, Issue 2, 2008, Pages 814-818

  Nie, H Y ^a   McIntyre, N S ^a   Lau, W M ^a   Feng, J M ^b  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b Nanometrics Japan Ltd   (Japan)

Author keywords

Atomic force microscopy; Ellipsometry and reflectometry; Octadecylphosphonic acid; Self assembled monolayers; Silicon wafer

Indexed keywords

ACIDS; ACOUSTIC MICROSCOPES; AMPLITUDE MODULATION; ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; ATOMS; DIELECTRIC FILMS; DISPERSION (WAVES); ELECTRON ENERGY LEVELS; ELLIPSOMETRY; MAGNETIC FILMS; MICROSCOPIC EXAMINATION; MISSILE BASES; MOLECULAR BEAM EPITAXY; MONOLAYERS; OPTICAL PROPERTIES; ORGANIC POLYMERS; REFLECTION; REFLECTOMETERS; SCANNING PROBE MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON COMPOUNDS; SILICON WAFERS; SPECTROSCOPIC ELLIPSOMETRY; SPONTANEOUS EMISSION;

ATOMIC FORCES; DATA FITTINGS; DEEP-UV; LORENTZ DISPERSION MODELS; MONOLAYER SYSTEMS; NATIVE OXIDE LAYERS; OCTADECYLPHOSPHONIC ACID; OCTADECYLPHOSPHONIC ACIDS; OPTICAL FUNCTIONS; OPTICAL STACKS; PARAMETERIZED; PARTIAL COVERAGES; REFLECTOMETRY; SINGLE CRYSTALLINE SILICONS; VISIBLE RANGES;

SELF ASSEMBLED MONOLAYERS;

EID: 55249093835     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.09.021     Document Type: Article

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