On the initial growth of atomic layer deposited TiO 2 films on silicon and copper surfaces

Thin Solid Films

Volumn 520, Issue 22, 2012, Pages 6752-6756

  Tao, Qian ^a   Overhage, Kirsten ^b   Jursich, Gregory ^c   Takoudis, Christos ^a,c  

^a University of Illinois at Chicago   (United States)

^b Purdue University   (United States)

^c UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

Atomic layer deposition; Nucleation; Selective growth; Titanium dioxide; X ray photoelectron spectroscopy

Indexed keywords

ATOMIC LAYER DEPOSITED; COPPER SURFACE; DEPOSITION CONDITIONS; INDUCTION PERIODS; INHIBITED GROWTH; NANOSCALE SEMICONDUCTORS; SELECTIVE GROWTH; SILICON-BASED; SOFT LITHOGRAPHY; SPECTRAL ELLIPSOMETRY; SURFACE PROFILOMETRY; TETRAKIS; TIO; TITANIUM PRECURSORS;

COPPER; FILM GROWTH; NUCLEATION; PHOTOELECTRONS; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING SILICON; SUBSTRATES; TITANIUM; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

EID: 84864702758     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.07.004     Document Type: Article

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