Al2O3/TiO2 nanolaminate thin film encapsulation for organic thin film transistors via plasma-enhanced atomic layer deposition

ACS Applied Materials and Interfaces

Volumn 6, Issue 9, 2014, Pages 6731-6738

  Kim, Lae Ho ^a   Kim, Kyunghun ^a   Park, Seonuk ^a   Jeong, Yong Jin ^a   Kim, Haekyoung ^b   Chung, Dae Sung ^c   Kim, Se Hyun ^b   Park, Chan Eon ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Yeungnam University   (South Korea)

^c Chung Ang University   (South Korea)

Author keywords

encapsulation; nanolamination; organic thin film transistor (OTFT); plasma enhanced atomic layer deposition (PEALD)

Indexed keywords

ALUMINUM; AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; CORROSION RESISTANCE; DEPOSITION; ENCAPSULATION; FIELD EFFECT TRANSISTORS; MECHANICAL PROPERTIES; PASSIVATION; PHOTOTRANSISTORS; THERMOELECTRIC EQUIPMENT; THIN FILM TRANSISTORS; TITANIUM DIOXIDE;

GAS BARRIER PROPERTIES; LOW TEMPERATURE PROCESSING; NANOLAMINATION; ORGANIC ELECTRONIC DEVICES; ORGANIC THIN FILM TRANSISTORS; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; THIN FILM ENCAPSULATION; TIO;

GAS PERMEABLE MEMBRANES;

EID: 84900860203     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am500458d     Document Type: Conference Paper

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