Thin-film passivation by atomic layer deposition for organic field-effect transistors

Applied Physics Letters

Volumn 93, Issue 16, 2008, Pages

  Jeon, Hayoung ^a   Shin, Kwonwoo ^a   Yang, Chanwoo ^a   Park, Chan Eon ^a   Park, Sang Hee Ko ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMIC PHYSICS; ATOMS; FIELD EFFECT TRANSISTORS; PULSED LASER DEPOSITION; THIN FILM DEVICES; TRANSISTORS; WATER VAPOR;

ATOMIC LAYERS; BARRIER PROPERTIES; ELECTRIC PERFORMANCES; LOW DEPOSITION TEMPERATURES; LOW WATERS; ORGANIC; PASSIVATION LAYERS; TRIMETHYLALUMINUM;

PASSIVATION;

EID: 54949091144     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3000017     Document Type: Article

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