On the triggering mechanism for the metal-insulator transition in thin film VO2 devices: Electric field versus thermal effects

Journal of Materials Science

Volumn 44, Issue 19, 2009, Pages 5345-5353

  Gopalakrishnan, Gokul ^a   Ruzmetov, Dmitry ^a   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED FIELD; CORRELATED ELECTRON SYSTEMS; DC CONDUCTIVITY; DEVICE GEOMETRIES; ELECTRO-THERMAL SIMULATION; ELECTRONIC PHASE TRANSITION; FIELD-INDUCED TRANSITIONS; FUNDAMENTAL RESEARCH; HIGH CONDUCTIVITY; HIGH-SPEED SWITCHING; NOVEL DEVICES; STRUCTURAL PHASE TRANSITION; STRUCTURAL TRANSITIONS; TEMPERATURE RISE; THIN-FILM STRUCTURE; THREE ORDERS OF MAGNITUDE; TRIGGERING MECHANISM; ULTRA-FAST; UNDERLYING MECHANISM; VANADIUM DIOXIDE;

ELECTRIC FIELDS; EXPERIMENTS; HEATING; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR INSULATOR BOUNDARIES; THERMAL EFFECTS; THIN FILM DEVICES; THIN FILMS; VANADIUM;

METAL INSULATOR TRANSITION;

EID: 68949183506     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-009-3442-7     Document Type: Article

References (31)

1. FJ Morin 1959 Phys. Rev. Lett 3 34
2. A Zylbersztejn NF Mott 1975 Phys. Rev 11 4383
3. CN Berglund HJ Guggenheim 1969 Phys. Rev 185 1022
4. Mott NF (1990) Metal-insulator transition. Taylor and Frances, London
5. JB Goodenough 1971 J. Solid State Chem 3 490
6. M Imada 1998 Rev. Mod. Phys 70 1039
7. A Cavalleri 2001 Phys. Rev. Lett 87 237401
8. A Cavalleri 2004 Phys. Rev. B 70 161102
9. S Xu 2004 J. Mater. Sci 39 489 10.1023/B:JMSC.0000011503.22893.f4
10. G Stefanovich 2000 J. Phys. : Condens. Matter 12 8837
11. PP Boriskov 2002 Tech. Phys. Lett 28 406
12. HT Kim 2004 New J. Phys 6 52
13. Y Watanabe 1995 Appl. Phys. Lett 66 1770
14. S Mathews 1997 Science 276 238
15. HT Kim 2006 Phys. Rev. Lett 97 266401
16. BJ Kim 2008 Phys. Rev. B 77 235401
17. J Sakai M Kurisu 2008 Phys. Rev. B 78 033106
18. JS Lee 2007 Appl. Phys. Lett 90 015907
19. JS Lee 2007 Appl. Phys. Lett 91 133509
20. Samsonov GV (1987) The oxide handbook. IFI/Plenum, New York
21. HT Kim 2005 Appl. Phys. Lett 86 242101
22. K Okimura J Sakai 2007 Jap. J. Appl. Phys 46 813
23. CN Berglund 1969 IEEE Trans. Electron. Devices 16 432
24. J Duchene 1971 Appl. Phys. Lett 19 115
25. BG Chae 2004 J. Kor. Phys. Soc 44 884
26. DH Youn 2004 J. Appl. Phys 95 1407
27. BJ Kim 2007 Appl. Phys. Lett 90 023515
28. D Ruzmetov 2008 Phys. Rev. B 77 195442
29. C Ko S Ramanathan 2008 Appl. Phys. Lett 93 252101
30. Lasance C, Moffat C (2005) Elec Cool 11:4
31. NR Mlyuka RT Kivaisi 2006 J. Mater. Sci 41 5619 10.1007/s10853-006-0261-y