A possible origin of core-level shift in SiO2/Si stacks

Applied Physics Letters

Volumn 102, Issue 4, 2013, Pages

  Wang, Xiaolei ^a   Xiang, Jinjuan ^a   Wang, Wenwu ^a   Zhang, Jing ^b   Han, Kai ^a   Yang, Hong ^a   Ma, Xueli ^a   Zhao, Chao ^a   Chen, Dapeng ^a   Ye, Tianchun ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b NORTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; CHARGE NEUTRALITY LEVEL; CORE-LEVEL SHIFT; ENERGY DIFFERENCES; GAP STATE; POTENTIAL DROP;

AUGER ELECTRON SPECTROSCOPY; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 84873607353     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4790157     Document Type: Article

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