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Journal of Applied Physics

Volumn 112, Issue 8, 2012, Pages

Band alignment of vanadium oxide as an interlayer in a hafnium oxide-silicon gate stack structure

(6) Zhu, Chiyu a Kaur, Manpuneet a Tang, Fu a Liu, Xin a Smith, David J a Nemanich, Robert J a

a ARIZONA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; CHARGE STORAGE; ELECTRIC FIELD-INDUCED TRANSITION; GATE STACK STRUCTURE; INSULATOR-METAL PHASE; LAYER STRUCTURES; NARROW BAND GAP; P-TYPE SI; SI(100) SURFACE; THERMALLY INDUCED; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY; VALENCE BAND OFFSETS; VANADIUM OXIDES;

ALIGNMENT; ELECTRIC FIELDS; ELECTRONIC PROPERTIES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PHOTOELECTRON SPECTROSCOPY; SILICON; SILICON OXIDES; VANADIUM COMPOUNDS;

HAFNIUM OXIDES;

EID: 84868377302 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4761990 Document Type: Article

Times cited : (9)

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