SiO2 thickness determination by X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 440-444

  Cole, D A ^a   Shallenberger, J R ^a,g   Novak, S W ^a   Moore, R L ^a   Edgell, M J ^b   Smith, S P ^b   Hitzman, C J ^b   Kirchhoff, J F ^b   Principe, E ^b   Nieveen, W ^b,c   Huang, F K ^c,h   Biswas, S ^d   Bleiler, R J ^e   Jones, K ^f  

^a Evans East   (United States)

^b CHARLES EVANS AND ASSOCIATES   (United States)

^c Surface Science Lab   (United States)

^d BRUNEL UNIVERSITY   (United Kingdom)

^e Evans Texas   (United States)

^f UNIVERSITY OF FLORIDA   (United States)

^g PENNSYLVANIA STATE UNIVERSITY   (United States)

^h ALZA CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DIELECTRIC FILMS; ELLIPSOMETRY; HIGH RESOLUTION ELECTRON MICROSCOPY; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SPECTROSCOPIC ELLIPSOMETRY (SE);

SILICA;

EID: 0034350496     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591208     Document Type: Article

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