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Volumn 61, Issue 5, 2014, Pages 1583-1589

Hysteresis-free nanosecond pulsed electrical characterization of top-gated graphene transistors

Author keywords

Charge trapping; field effect transistors (FETs); graphene; high dielectric; hysteresis; mobility; nanosecond pulsed measurements.

Indexed keywords

CARRIER MOBILITY; CHARGE TRAPPING; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; HYSTERESIS;

EID: 84899686233     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2309651     Document Type: Article
Times cited : (37)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.