메뉴 건너뛰기




Volumn 21, Issue 8, 2010, Pages

Reduction of hysteresis for carbon nanotube mobility measurements using pulsed characterization

Author keywords

[No Author keywords available]

Indexed keywords

DUTY CYCLES; GATE PULSE; GRAPHENES; MATERIAL SYSTEMS; MOBILITY MEASUREMENTS; NANOSCALE DEVICE; PULSED MEASUREMENTS; TEMPERATURE RANGE; TRAP DEPTH; VOLTAGE PULSE;

EID: 76249084900     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/8/085702     Document Type: Article
Times cited : (107)

References (30)
  • 1
    • 2342629497 scopus 로고    scopus 로고
    • Extraordinary mobility in semiconducting carbon nanotubes
    • Durkop T, Getty S A, Cobas E and Fuhrer M S 2004 Extraordinary mobility in semiconducting carbon nanotubes Nano Lett. 4 35-9
    • (2004) Nano Lett. , vol.4 , pp. 35-39
    • Durkop, T.1    Getty, S.A.2    Cobas, E.3    Fuhrer, M.S.4
  • 2
    • 28844440496 scopus 로고    scopus 로고
    • Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors
    • Zhou X, Park J Y, Huang S, Liu J and McEuen P L 2005 Band structure, phonon scattering, and the performance limit of single-walled carbon nanotube transistors Phys. Rev. Lett. 95 4
    • (2005) Phys. Rev. Lett. , vol.95 , pp. 146805
    • Zhou, X.1    Park, J.Y.2    Huang, S.3    Liu, J.4    McEuen, P.L.5
  • 5
    • 0042948502 scopus 로고    scopus 로고
    • Hysteresis caused by water molecules in carbon nanotube field-effect transistors
    • Kim W, Javey A, Vermesh O, Wang Q, Li Y and Dai H 2003 Hysteresis caused by water molecules in carbon nanotube field-effect transistors Nano Lett. 3 193-8
    • (2003) Nano Lett. , vol.3 , pp. 193-198
    • Kim, W.1    Javey, A.2    Vermesh, O.3    Wang, Q.4    Li, Y.5    Dai, H.6
  • 6
    • 34548552835 scopus 로고    scopus 로고
    • Origin of gate hysteresis in carbon nanotube field-effect transistors
    • Lee J S, Ryu S, Yoo K, Choi I S, Yun W S and Kim J 2007 Origin of gate hysteresis in carbon nanotube field-effect transistors J. Phys. Chem. C 111 12504-7
    • (2007) J. Phys. Chem. C , vol.111 , pp. 12504-12507
    • Lee, J.S.1    Ryu, S.2    Yoo, K.3    Choi, I.S.4    Yun, W.S.5    Kim, J.6
  • 7
    • 33747463629 scopus 로고    scopus 로고
    • Localized charge trapping due to adsorption in nanotube field-effect transistor and its field-mediated transport
    • Lin H and Tiwari S 2006 Localized charge trapping due to adsorption in nanotube field-effect transistor and its field-mediated transport Appl. Phys. Lett. 89 3
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 073507
    • Lin, H.1    Tiwari, S.2
  • 9
    • 33750188173 scopus 로고    scopus 로고
    • Charge-injection-induced dynamic screening and origin of hysteresis in field-modulated transport in single-wall carbon nanotubes
    • Vijayaraghavan A, Kar S, Soldano C, Talapatra S, Nalamasu O and Ajayan P M 2006 Charge-injection-induced dynamic screening and origin of hysteresis in field-modulated transport in single-wall carbon nanotubes Appl. Phys. Lett. 89 162108
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 162108
    • Vijayaraghavan, A.1    Kar, S.2    Soldano, C.3    Talapatra, S.4    Nalamasu, O.5    Ajayan, P.M.6
  • 10
    • 34948845210 scopus 로고    scopus 로고
    • Hysteretic transfer characteristics of double-walled and single-walled carbon nanotube field-effect transistors
    • Yuan S, Zhang Q, Shimamoto D, Muramatsu H, Hayashi T, Kim Y A and Endo M 2007 Hysteretic transfer characteristics of double-walled and single-walled carbon nanotube field-effect transistors Appl. Phys. Lett. 91 3
    • (2007) Appl. Phys. Lett. , vol.91 , pp. 143118
    • Yuan, S.1    Zhang, Q.2    Shimamoto, D.3    Muramatsu, H.4    Hayashi, T.5    Kim, Y.A.6    Endo, M.7
  • 12
    • 15844399392 scopus 로고    scopus 로고
    • Modeling hysteresis phenomena in nanotube field-effect transistors
    • Robert-Peillard A and Rotkin S V 2005 Modeling hysteresis phenomena in nanotube field-effect transistors IEEE Trans. Nanotechnol. 4 284-8
    • (2005) IEEE Trans. Nanotechnol. , vol.4 , pp. 284-288
    • Robert-Peillard, A.1    Rotkin, S.V.2
  • 13
    • 0000680281 scopus 로고    scopus 로고
    • Nonvolatile molecular memory elements based on ambipolar nanotube field effect transistors
    • Radosavljevic M, Freitag M, Thadani K V and Johnson A T 2002 Nonvolatile molecular memory elements based on ambipolar nanotube field effect transistors Nano Lett. 2 761-4
    • (2002) Nano Lett. , vol.2 , pp. 761-764
    • Radosavljevic, M.1    Freitag, M.2    Thadani, K.V.3    Johnson, A.T.4
  • 14
    • 65249135863 scopus 로고    scopus 로고
    • High-speed memory from carbon nanotube field-effect transistors with high-K gate dielectric
    • Rinkio M, Johansson A, Paraoanu G S and Torma P 2009 High-speed memory from carbon nanotube field-effect transistors with high-K gate dielectric Nano Lett. 9 643-7
    • (2009) Nano Lett. , vol.9 , pp. 643-647
    • Rinkio, M.1    Johansson, A.2    Paraoanu, G.S.3    Torma, P.4
  • 15
    • 0015490613 scopus 로고
    • Tunneling to traps in insulators
    • Lundstrom I and Svensson C 1972 Tunneling to traps in insulators J. Appl. Phys. 43 5045-7
    • (1972) J. Appl. Phys. , vol.43 , pp. 5045-5047
    • Lundstrom, I.1    Svensson, C.2
  • 18
    • 57949109172 scopus 로고    scopus 로고
    • Avalanche-induced current enhancement in semiconducting carbon nanotubes
    • Liao A, Zhao Y and Pop E 2008 Avalanche-induced current enhancement in semiconducting carbon nanotubes Phys. Rev. Lett. 101 256804
    • (2008) Phys. Rev. Lett. , vol.101 , pp. 256804
    • Liao, A.1    Zhao, Y.2    Pop, E.3
  • 19
    • 76249098417 scopus 로고    scopus 로고
    • Please see
    • Please see http://poplab.ece.illinois.edu/files/IdVg-Pulse-Script.txt
  • 21
    • 33747839682 scopus 로고    scopus 로고
    • Gate capacitance of back-gated nanowire field-effect transistors
    • Wunnicke O 2006 Gate capacitance of back-gated nanowire field-effect transistors Appl. Phys. Lett. 89 083102
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 083102
    • Wunnicke, O.1
  • 25
    • 72049091769 scopus 로고    scopus 로고
    • Multiband mobility in semiconducting carbon nanotubes
    • Zhao Y, Liao A and Pop E 2009 Multiband mobility in semiconducting carbon nanotubes IEEE Electron. Device Lett. 30 1078-80
    • (2009) IEEE Electron. Device Lett. , vol.30 , pp. 1078-1080
    • Zhao, Y.1    Liao, A.2    Pop, E.3
  • 26
    • 0042991275 scopus 로고    scopus 로고
    • Ballistic carbon nanotube field-effect transistors
    • Javey A, Guo J, Wang Q, Lundstrom M and Dai H 2003 Ballistic carbon nanotube field-effect transistors Nature 424 654
    • (2003) Nature , vol.424 , pp. 654
    • Javey, A.1    Guo, J.2    Wang, Q.3    Lundstrom, M.4    Dai, H.5
  • 27
    • 7544230754 scopus 로고    scopus 로고
    • Electrical properties of 0.4 cm long single-walled carbon nanotubes
    • Li S, Yu Z, Rutherglen C and Burke P J 2004 Electrical properties of 0.4 cm long single-walled carbon nanotubes Nano Lett. 4 2003-7
    • (2004) Nano Lett. , vol.4 , pp. 2003-2007
    • Li, S.1    Yu, Z.2    Rutherglen, C.3    Burke, P.J.4
  • 30
    • 0035929941 scopus 로고    scopus 로고
    • Polymer functionalization for air-stable n-type carbon nanotube field-effect transistors
    • Shim M, Javey A, Shi Kam N W and Dai H 2001 Polymer functionalization for air-stable n-type carbon nanotube field-effect transistors J. Am. Chem. Soc. 123 11512-3
    • (2001) J. Am. Chem. Soc. , vol.123 , pp. 11512-11513
    • Shim, M.1    Javey, A.2    Shi Kam, N.W.3    Dai, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.