Electronic structures of oxygen-deficient Ta2O5

AIP Advances

Volumn 3, Issue 4, 2013, Pages

  Yang, Yong ^a   Nahm, Ho Hyun ^a   Sugino, Osamu ^a,b   Ohno, Takahisa ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRONIC STRUCTURE; OXYGEN; TANTALUM OXIDES; TEMPERATURE;

CHARGE STATE; ELECTRONIC DEVICE; FIRST PRINCIPLES; LEVEL STRUCTURE; LOW TEMPERATURE PHASE; OXYGEN DEFICIENT; SHALLOW LEVELS; VACANCY SITES;

OXYGEN VACANCIES;

EID: 84877611304     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4800899     Document Type: Article

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