Graphene growth and device integration

Proceedings of the IEEE

Volumn 101, Issue 7, 2013, Pages 1536-1556

  Colombo, Luigi ^a   Wallace, Robert M ^b   Ruoff, Rodney S ^c  

^a TEXAS INSTRUMENTS   (United States)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Chemical vapor deposition (CVD); electrochemical transfer; graphene; mobility; Raman spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTRONICS INDUSTRY; FIELD EFFECT TRANSISTORS; GRAPHENE TRANSISTORS; INTEGRATION; RAMAN SPECTROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL VAPOR DEPOSITIONS (CVD); DEVICE INTEGRATION; ELECTRICAL DATA; ELECTROCHEMICAL TRANSFER; ELECTRONIC DEVICE; PERFORMANCE TARGETS; RADIO FREQUENCY DEVICES; SEMICONDUCTOR INDUSTRY;

GRAPHENE;

EID: 84879879743     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2013.2260114     Document Type: Article

References (186)

1. FactSage, The integrated thermodynamic databank system, 2010. [Online]. Available: http://www.factsage.com/.
2. X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, and R. S. Ruoff, "Transfer of large-area graphene films for high-performance transparent conductive electrodes," Nano Lett., vol. 9, pp. 4359-4363, 2009.
3. S. K. Banerjee, L. F. Register, E. Tutuc, D. Basu, S. Kim, D. Reddy, and A. H. MacDonald, "Graphene for CMOS and beyond CMOS applications," Proc. IEEE, vol. 98, no. 12, pp. 2032-2046, Dec. 2010.
4. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, "Electric field effect in atomically thin carbon films," Science, vol. 306, pp. 666-669, Oct. 2004. (Pubitemid 39440910)
5. V. V. Cheianov, V. Fal'ko, and B. L. Altshuler, "The focusing of electron flow and a Veselago lens in graphene p-n junctions," Science, vol. 315, pp. 1252-1255, Mar. 2007. (Pubitemid 46364258)
6. Q. Zhang, T. Fang, H. L. Xing, A. Seabaugh, and D. Jena, "Graphene nanoribbon tunnel transistors," IEEE Electron Device Lett., vol. 29, no. 12, pp. 1344-1346, Dec. 2008.
7. A. Pirkle, R. M. Wallace, and L. Colombo, "In situ studies of Al2O3 and HfO2 dielectrics on graphite," Appl. Phys. Lett., vol. 95, 2009, 133106.
8. X. Li, W. Cai, L. Colombo, and R. S. Ruoff, "Evolution of graphene growth on Ni and Cu by carbon isotope labeling," Nano Lett., vol. 9, pp. 4268-4272, 2009.
9. X. Li, C. W. Magnuson, A. Venugopal, R. M. Tromp, J. B. Hannon, E. M. Vogel, L. Colombo, and R. S. Ruoff, "Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper," J. Amer. Chem. Soc., vol. 133, pp. 2816-2819, 2011.
10. J. A. Robinson, M. LaBella, M. Zhu, M. Hollander, R. Kasarda, Z. Hughes, K. Trumbull, R. Cavalero, and D. Snyder, "Contacting graphene," Appl. Phys. Lett., vol. 98, Jan. 2011, 053103.
11. X. S. Li, W. W. Cai, J. H. An, S. Kim, J. Nah, D. X. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, and R. S. Ruoff, "Large-area synthesis of high-quality and uniform graphene films on copper foils," Science, vol. 324, pp. 1312-1314, Jun. 2009.
12. S. Bae, H. Kim, Y. Lee, X. F. Xu, J. S. Park, Y. Zheng, J. Balakrishnan, T. Lei, H. R. Kim, Y. I. Song, Y. J. Kim, K. S. Kim, B. Ozyilmaz, J. H. Ahn, B. H. Hong, and S. Iijima, "Roll-to-roll production of 30-inch graphene films for transparent electrodes," Nature Nanotechnol., vol. 5, pp. 574-578, Aug. 2010.
13. F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, "Graphene photonics and optoelectronics," Nature Photon., vol. 4, pp. 611-622, Sep. 2010.
14. S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, and S. K. Banerjee, "Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric," Appl. Phys. Lett., vol. 94, Feb. 2009, 062107.
15. J. Chan, A. Venugopal, A. Pirkle, S. McDonnell, D. Hinojos, C. W. Magnuson, R. S. Ruoff, L. Colombo, R. M. Wallace, and E. M. Vogel, "Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition," ACS Nano, vol. 6, pp. 3224-3229, 2012.
16. B. K. Lee, S. Y. Park, H. C. Kim, K. Cho, E. M. Vogel, M. J. Kim, R. M. Wallace, and J. Y. Kim, "Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics," Appl. Phys. Lett., vol. 92, May 2008, 203102.
17. B. Lee, G. Mordi, M. J. Kim, Y. J. Chabal, E. M. Vogel, R. M. Wallace, K. J. Cho, L. Colombo, and J. Kim, "Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices," Appl. Phys. Lett., vol. 97, Jul. 2010, 043107.
18. A. Pirkle, J. Chan, A. Venugopal, D. Hinojos, C. W. Magnuson, S.McDonnell, L. Colombo, E. M. Vogel, R. S. Ruoff, and R. M. Wallace, "The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2," Appl. Phys. Lett., vol. 99, 2011, 122108-3.
19. A. Pirkle, R. M. Wallace, and L. Colombo, "In situ studies of Al2O3 and HfO2 dielectrics on graphite," Appl. Phys. Lett., vol. 95, 2009, 133106.
20. Y. Wang, Y. Zheng, X. F. Xu, E. Dubuisson, Q. L. Bao, J. Lu, and K. P. Loh, "Electrochemical delamination of CVD-grown graphene film: Toward the recyclable use of copper catalyst," ACS Nano, vol. 5, pp. 9927-9933, Dec. 2011.
21. L. B. Gao, W. C. Ren, H. L. Xu, L. Jin, Z. X. Wang, T. Ma, L. P. Ma, Z. Y. Zhang, Q. Fu, L. M. Peng, X. H. Bao, and H. M. Cheng, "Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum," Nature Commun., vol. 3, Feb. 2012, article 699.
22. F. Bonaccorso, A. Lombardo, T. Hasan, Z. P. Sun, L. Colombo, and A. C. Ferrari, "Production and processing of graphene and 2D crystals," Mater. Today, vol. 15, pp. 564-589, Dec. 2012.
23. D. R. Dreyer, R. S. Ruoff, and C. W. Bielawski, "From conception to realization: An historial account of graphene and some perspectives for its future," Angewandte Chemie-Int. Ed., vol. 49, pp. 9336-9344, 2010.
24. K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V.Morozov, and A. K. Geim, "Two-dimensional atomic crystals," Proc. Nat. Acad. Sci. USA, vol. 102, pp. 10451-10453, Jul. 2005. (Pubitemid 41061574)
25. A. J. Van Bommel, J. E. Crombeen, and A. Van Tooren, "LEED and Auger electron observations of the SiC(0001) surface," Surf. Sci., vol. 48, pp. 463-472, 1975.
26. R. Addou, A. Dahal, P. Sutter, and M. Batzill, "Monolayer graphene growth on Ni(111) by low temperature chemical vapor deposition," Appl. Phys. Lett., vol. 100, Jan. 2012, 021601.
27. P.W. Sutter, P.M. Albrecht, and E. A. Sutter, "Graphene growth on epitaxial Ru thin films on sapphire," Appl. Phys. Lett., vol. 97, Nov. 2010, 213101.
28. J. Coraux, A. T. N'Diaye, M. Engler, C. Busse, D. Wall, N. Buckanie, F. Heringdorf, R. van Gastel, B. Poelsema, and T. Michely, "Growth of graphene on Ir(111)," New J. Phys., vol. 11, Feb. 2009, 023006.
29. H. Ago, Y. Ito, N. Mizuta, K. Yoshida, B. Hu, C. M. Orofeo, M. Tsuji, K. Ikeda, and S. Mizuno, "Epitaxial chemical vapor deposition growth of single-layer graphene over cobalt film crystallized on sapphire," ACS Nano, vol. 4, pp. 7407-7414, Dec. 2010.
30. Y. Hernandez, V. Nicolosi, M. Lotya, F. M. Blighe, Z. Y. Sun, S. De, I. T. McGovern, B. Holland, M. Byrne, Y. K. Gun'ko, J. J. Boland, P. Niraj, G. Duesberg, S. Krishnamurthy, R. Goodhue, J. Hutchison, V. Scardaci, A. C. Ferrari, and J. N. Coleman, "High-yield production of graphene by liquid-phase exfoliation of graphite," Nature Nanotechnol., vol. 3, pp. 563-568, Sep. 2008.
31. X. L. Li, G. Y. Zhang, X. D. Bai, X. M. Sun, X. R. Wang, E. Wang, and H. J. Dai, "Highly conducting graphene sheets and Langmuir-Blodgett films," Nature Nanotechnol., vol. 3, pp. 538-542, Sep. 2008.
32. C. Berger, Z. Song, T. Li, X. Li, A. Y. Ogbazghi, R. Feng, Z. Dai, A. N.Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, "Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics," J. Phys. Chem. B, vol. 108, pp. 19912-19916, 2004. (Pubitemid 40079151)
33. J. Hass, F. Varchon, J. E. Milla'n-Otoya, M. Sprinkle, N. Sharma, W. A. de Heer, C. Berger, P. N. First, L. Magaud, and E. H. Conrad, "Why multilayer graphene on 4H-SiC(000-1) behaves like a single sheet of graphene," Phys. Rev. Lett., vol. 100, 2008, 125504.
34. P. N. First, W. A. de Heer, T. Seyller, C. Berger, J. A. Stroscio, and J. S. Moon, "Epitaxial graphenes on silicon carbide," MRS Bull., vol. 35, pp. 296-305, Apr. 2010.
35. A. Hashimoto, H. Terasaki, K. Morita, H. Hibino, and S. Tanaka, A breakthrough toward wafer-size epitaxial graphene transfer, 2010. Online]. Available: arXiv:1005.4725 [cond-mat.mtrl-sci].
36. M. Y. Han, B. Ozyilmaz, Y. Zhang, and P. Kim, "Energy band-gap engineering of graphene nanoribbons," Phys. Rev. Lett., vol. 98, 2007, 206805.
37. X. Y. Yang, X. Dou, A. Rouhanipour, L. J. Zhi, H. J. Rader, and K. Mullen, "Two-dimensional graphene nanoribbons," J. Amer. Chem. Soc., vol. 130, pp. 4216-4217, Apr. 2008. (Pubitemid 351466401)
38. S. Linden, D. Zhong, A. Timmer, N. Aghdassi, J. H. Franke, H. Zhang, X. Feng, K. Mullen, H. Fuchs, L. Chi, and H. Zacharias, "Electronic structure of spatially aligned graphene nanoribbons on Au(788)," Phys. Rev. Lett., vol. 108, May 2012, 216801.
39. S. Osella, A. Narita, M. G. Schwab, Y. Hernandez, X. L. Feng, K. Mullen, and D. Beljonne, "Graphene nanoribbons as low band gap donor materials for organic photovoltaics: Quantum chemical aided design," ACS Nano, vol. 6, pp. 5539-5548, Jun. 2012.
40. P. Ruffieux, J. M. Cai, N. C. Plumb, L. Patthey, D. Prezzi, A. Ferretti, E. Molinari, X. L. Feng, K. Mullen, C. A. Pignedoli, and R. Fasel, "Electronic structure of atomically precise graphene nanoribbons," ACS Nano, vol. 6, pp. 6930-6935, Aug. 2012.
41. A. Reina, X. T. Jia, J. Ho, D. Nezich, H. B. Son, V. Bulovic, M. S. Dresselhaus, and J. Kong, "Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition," Nano Lett., vol. 9, pp. 30-35, Jan. 2009.
42. K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, "Large-scale pattern growth of graphene films for stretchable transparent electrodes," Nature, vol. 457, pp. 706-710, Feb. 2009.
43. Z.W. Peng, Z. Yan, Z. Z. Sun, and J. M. Tour, "Direct growth of bilayer graphene on SiO2 substrates by carbon diffusion through nickel," ACS Nano, vol. 5, pp. 8241-8247, Oct. 2011.
44. X. Li, C. W. Magnuson, A. Venugopal, J. An, J. W. Suk, B. Han, M. Borysiak, W. Cai, A. Velamakanni, Y. Zhu, L. Fu, E. M. Vogel, E. Voelkl, L. Colombo, and R. S. Ruoff, "Graphene films with large domain size by a two-step chemical vapor deposition process," Nano Lett., vol. 10, pp. 4328-4334, 2010.
45. N. Petrone, C. R. Dean, I. Meric, A. M. van der Zande, P. Y. Huang, L. Wang, D. Muller, K. L. Shepard, and J. Hone, "Chemical vapor deposition-derived graphene with electrical performance of exfoliated graphene," Nano Lett., vol. 12, pp. 2751-2756, Jun. 2012.
46. G. H. Gao, W. Gao, E. Cannuccia, J. Taha-Tijerina, L. Balicas, A. Mathkar, T. N. Narayanan, Z. Liu, B. K. Gupta, J. Peng, Y. S. Yin, A. Rubio, and P. M. Ajayan, "Artificially stacked atomic layers: Toward new van der Waals solids," Nano Lett., vol. 12, pp. 3518-3525, Jul. 2012.
47. Z. Liu, L. Song, S. Z. Zhao, J. Q. Huang, L. L. Ma, J. N. Zhang, J. Lou, and P. M. Ajayan, "Direct growth of graphene/ hexagonal boron nitride stacked layers," Nano Lett., vol. 11, pp. 2032-2037, May 2011.
48. M. Han, B. Ozyilmaz, Y. Zhang, P. Jarillo-Herero, and P. Kim, "Electronic transport measurements in graphene nanoribbons," Phys. Stat. Sol. BVBasic Solid State Phys., vol. 244, pp. 4134-4137, Nov. 2007.
49. T. Ohta, A. Bostwick, T. Seyller, K. Horn, and E. Rotenberg, "Controlling the electronic structure of bilayer graphene," Science, vol. 313, pp. 951-954, Aug. 2006. (Pubitemid 44267382)
50. E. V. Castro, K. S. Novoselov, S. V. Morozov, N. M. R. Peres, J. Dos Santos, J. Nilsson, F. Guinea, A. K. Geim, and A. H. C. Neto, "Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect," Phys. Rev. Lett., vol. 99, Nov. 2007, 216802.
51. B. N. Szafranek, G. Fiori, D. Schall, D. Neumaier, and H. Kurz, "Current saturation and voltage gain in bilayer graphene field effect transistors," Nano Lett., vol. 12, pp. 1324-1328, Mar. 2012.
52. G. Fiori and G. Iannaccone, "Ultralow-voltage bilayer graphene tunnel FET," IEEE Electron Device Lett., vol. 30, no. 10, pp. 1096-1098, Oct. 2009.
53. G. Fiori and G. Iannaccone, "On the possibility of tunable-gap bilayer graphene FET," IEEE Electron Device Lett., vol. 30, pp. 261-264, Mar. 2009.
54. H. Hosokawa, R. Sako, H. Ando, and H. Tsuchiya, "Performance comparisons of bilayer graphene and graphene nanoribbon field-effect transistors under ballistic transport," Jpn. J. Appl. Phys., vol. 49, Nov. 2010, 110207.
55. K. Majumdar, K. Murali, N. Bhat, F. N. Xia, and Y. M. Lin, "High on-off ratio bilayer graphene complementary field effect transistors," in Proc. IEEE Int. Electron Devices Meeting, 2010, pp. 736-739.
56. V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and N. Kirova, "Device model for graphene bilayer field-effect transistor," J. Appl. Phys., vol. 105, May 2009, 104510.
57. V. Ryzhii, M. Ryzhii, A. Satou, T. Otsuji, and V. Mitin, "Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation," J. Appl. Phys., vol. 109, Mar. 2011, 064508.
58. D. Svintsov, V. Vyurkov, V. Ryzhii, and T. Otsuji, "Effect of "Mexican Hat" on graphene bilayer field-effect transistor characteristics," Jpn. J. Appl. Phys., vol. 50, Jul. 2011, 070112.
59. Y. B. Zhang, T. T. Tang, C. Girit, Z. Hao, M. C. Martin, A. Zettl, M. F. Crommie, Y. R. Shen, and F. Wang, "Direct observation of a widely tunable bandgap in bilayer graphene," Nature, vol. 459, pp. 820-823, Jun. 2009.
60. J. R. Kyle, C. S. Ozkan, and M. Ozkan, "Industrial graphene metrology," Nanoscale, vol. 4, no. 13, pp. 3807-3819, 2012.
61. C. M. Garner, D. Herr, and Y. Obeng, "Metrology and characterization challenges for emerging research materials and devices," in Proc. Front. Characterization Metrology Nanoelectron., vol. 1395, D. G. Seiler, A. C. Diebold, R. McDonald, A. Chabli, and E. M. Secula, Eds., 2011, vol. 1395, pp. 43-46.
62. A. Tzalenchuk, S. Lara-Avila, K. Cedergren, M. Syva?ja?rvi, R. Yakimova, O. Kazakova, T. J. B. M. Janssen, K. Moth-Poulsen, T. Bjørnholm, S. Kopylov, V. Fal'ko, and S. Kubatkin, "Engineering and metrology of epitaxial graphene," Solid State Commun., vol. 151, pp. 1094-1099, 2011.
63. P. Blake, E. W. Hill, A. H. C. Neto, K. S. Novoselov, D. Jiang, R. Yang, T. J. Booth, and A. K. Geim, "Making graphene visible," Appl. Phys. Lett., vol. 91, 2007, 063124-3.
64. I. Jung, J. S. Rhyee, J. Y. Son, R. S. Ruoff, and K. Y. Rhee, "Colors of graphene and graphene-oxide multilayers on various substrates," Nanotechnology, vol. 23, Jan. 2012, 025708.
65. F. Nelson, V. Kamineni, T. Zhang, E. Comfort, J. U. Lee, and A. Diebold, "Spectroscopic ellipsometry of CVD graphene," ECS Trans., vol. 35, pp. 173-183, 2011.
66. A. Hashimoto, K. Suenaga, A. Gloter, K. Urita, and S. Iijima, "Direct evidence for atomic defects in graphene layers," Nature, vol. 430, pp. 870-873, 2004. (Pubitemid 39119210)
67. F. Nelson, A. C. Diebold, and R. Hull, "Simulation study of aberration-corrected high-resolution transmission electron microscopy imaging of few-layer-graphene stacking," Microscopy Microanal., vol. 16, pp. 194-199, 2010.
68. E. Bauer, "Low energy electron microscopy," Rep. Progr. Phys., vol. 57, pp. 895-938, Sep. 1994. (Pubitemid 24979619)
69. P. Sutter, J. T. Sadowski, and E. Sutter, "Graphene on Pt(111): Growth and substrate interaction," Phys. Rev. B, vol. 80, Dec. 2009, 245411.
70. R. M. Tromp and J. B. Hannon, "Thermodynamics and kinetics of graphene growth on SiC(0001)," Phys. Rev. Lett., vol. 102, Mar. 2009, 106104.
71. J. M. Wofford, S. Nie, K. F. McCarty, N. C. Bartelt, and O. D. Dubon, "Graphene Islands on Cu foils: The interplay between shape, orientation, and defects," Nano Lett., vol. 10, pp. 4890-4896, 2010.
72. H. Hattab, A. T. N'Diaye, D. Wall, C. Klein, G. Jnawali, J. Coraux, C. Busse, R. van Gastel, B. Poelsema, T. Michely, F. Heringdorf, and M. Horn-von Hoegen, "Interplay of wrinkles, strain, and lattice parameter in graphene on iridium," Nano Lett., vol. 12, pp. 678-682, Feb. 2012.
73. M. Ishigami, J. H. Chen, W. G. Cullen, M. S. Fuhrer, and E. D. Williams, "Atomic structure of graphene on SiO2," Nano Lett., vol. 7, pp. 1643-1648, 2007.
74. C. H. Lui, L. Liu, K. F.Mak, G.W. Flynn, and T. F. Heinz, "Ultraflat graphene," Nature, vol. 462, pp. 339-341, 2009.
75. A. C. Ferrari and J. Robertson, "Resonant Raman spectroscopy of disordered, amorphous, and diamondlike carbon," Phys. Rev. B, vol. 64, 2001, 075414.
76. Y. Wang, D. C. Alsmeyer, and R. L. McCreery, "Raman spectroscopy of carbon materials: Structural basis of observed spectra," Chem. Mater., vol. 2, pp. 557-563, 1990.
77. L.M. Malard, M. A. Pimenta, G. Dresselhaus, and M. S. Dresselhaus, "Raman spectroscopy in graphene," Phys. Rep.VRev. Sec. Phys. Lett., vol. 473, pp. 51-87, Apr. 2009.
78. K. Siegbahn, "A discussion on photoelectron spectroscopy," Philosoph. Trans. Roy. Soc. Lond. A, Math. Phys. Sci., vol. 268, pp. 33-57, 1970.
79. S. T. Jackson and R. G. Nuzzo, "Determining hybridization differences for amorphous carbon from the XPS C 1s envelope," Appl. Surf. Sci., vol. 90, pp. 195-203, 1995.
80. J. A. Leiro, M. H. Heinonen, T. Laiho, and I. G. Batirev, "Core-level XPS spectra of fullerene, highly oriented pyrolitic graphite, and glassy carbon," J. Electron Spectroscopy Related Phenomena, vol. 128, pp. 205-213, 2003.
81. H. Estrade-Szwarckopf, "XPS photoemission in carbonaceous materials: A 'defect' peak beside the graphitic asymmetric peak," Carbon, vol. 42, pp. 1713-1721, 2004.
82. A. Y. Tontegode, "Carbon in transition-metal surfaces," Progr. Surf. Sci., vol. 38, pp. 201-429, 1991.
83. A. E. Karu and M. Beer, "Pyrolitic formation of highly crystalline graphite films," J. Appl. Phys., vol. 37, 1966, article 2179.
84. J. C. Shelton, H. R. Patil, and J. M. Blakely, "Equilibrium segregation of carbon to a nickel(111) surface: A surface phase transition," Surf. Sci., vol. 43, pp. 493-520, 1974.
85. L. C. Isett and J. M. Blakely, "Segregation isosteres for carbon at the (100) surface of nickel," Surf. Sci., vol. 58, pp. 397-414, 1976.
86. L. C. Isett and J. M. Blakely, "Binding of carbon atoms at a steppedVNi surface," J. Vac. Sci. Technol., vol. 12, pp. 237-241, 1975.
87. M. Eizenberg and J. M. Blakely, "Carbon monolayer phase condensation on Ni(111)," Surf. Sci., vol. 82, pp. 228-236, 1979.
88. M. Eizenberg and J. M. Blakely, "Carbon interaction with nickel surfaces: Monolayer formation and structural stability," J. Chem. Phys., vol. 71, pp. 3467-3477, 1979.
89. J. Wintterlin and M. L. Bocquet, "Graphene on metal surfaces," Surf. Sci., vol. 603, pp. 1841-1852, 2009.
90. M. Batzill, "The surface science of graphene: Metal interfaces, CVD synthesis, nanoribbons, chemical modifications, and defects," Surf. Sci. Rep., vol. 67, pp. 83-115, Mar. 2012.
91. A. Ismach, C. Druzgalski, S. Penwell, A. Schwartzberg, M. Zheng, A. Javey, J. Bokor, and Y. G. Zhang, "Direct chemical vapor deposition of graphene on dielectric surfaces," Nano Lett., vol. 10, pp. 1542-1548, May 2010.
92. S. Gaddam, C. Bjelkevig, S. P. Ge, K. Fukutani, P. A. Dowben, and J. A. Kelber, "Direct graphene growth on MgO: Origin of the band gap," J. Phys., Condensed Matter, vol. 23, Feb. 2011, 072204.
93. M. Zhou, F. L. Pasquale, P. A. Dowben, A. Boosalis, M. Schubert, V. Darakchieva, R. Yakimova, L. M. Kong, and J. A. Kelber, "Direct graphene growth on Co3O4111+ by molecular beam epitaxy," J. Phys., Condensed Matter, vol. 24, Feb. 2012, 072201.
94. L. Ci, L. Song, C. H. Jin, D. Jariwala, D. X. Wu, Y. J. Li, A. Srivastava, Z. F. Wang, K. Storr, L. Balicas, F. Liu, and P. M. Ajayan, "Atomic layers of hybridized boron nitride and graphene domains," Nature Mater., vol. 9, pp. 430-435, May 2010.
95. G. Xu, J. C. M. Torres, J. Bai, J. Tang, T. Yu, Y. Huang, X. Duan, Y. Zhang, and K. L. Wang, "Linewidth roughness in nanowire-mask-based graphene nanoribbons," Appl. Phys. Lett., vol. 98, 2011, 243118.
96. M. Luisier and G. Klimeck, "Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness," Appl. Phys. Lett., vol. 94, 2009, 223505.
97. Y. Yoon and J. Guo, "Effect of edge roughness in graphene nanoribbon transistors," Appl. Phys. Lett., vol. 91, 2007, 073103.
98. S. Lee, K. Lee, and Z. H. Zhong, "Wafer scale homogeneous bilayer graphene films by chemical vapor deposition," Nano Lett., vol. 10, pp. 4702-4707, Nov. 2010.
99. K. Yan, H. L. Peng, Y. Zhou, H. Li, and Z. F. Liu, "Formation of bilayer bernal graphene: Layer-by-layer epitaxy via chemical vapor deposition," Nano Lett., vol. 11, pp. 1106-1110, Mar. 2011.
100. N. G. Shang, P. Papakonstantinou, M. McMullan, M. Chu, A. Stamboulis, A. Potenza, S. S. Dhesi, and H. Marchetto, "Catalyst-free efficient growth, orientation and biosensing properties of multilayer graphene nanoflake films with sharp edge planes," Adv. Funct. Mater., vol. 18, pp. 3506-3514, Nov. 2008.
101. M. Sprinkle, M. Ruan, Y. Hu, J. Hankinson, M. Rubio-Roy, B. Zhang, X. Wu, C. Berger, and W. A. de Heer, "Scalable templated growth of graphene nanoribbons on SiC," Nature Nanotechnol., vol. 5, pp. 727-731, Oct. 2010.
102. Y. K. Hu, M. Ruan, Z. L. Guo, R. Dong, J. Palmer, J. Hankinson, C. Berger, and W. A. de Heer, "Structured epitaxial graphene: Growth and properties," J. Phys. D, Appl. Phys., vol. 45, Apr. 2012, 154010.
103. J. L. Tedesco, B. L. VanMil, R. L. Myers-Ward, J. M. McCrate, S. A. Kitt, P. M. Campbell, G. G. Jernigan, J. C. Culbertson, C. R. Eddy, and D. K. Gaskill, "Hall effect mobility of epitaxial graphene grown on silicon carbide," Appl. Phys. Lett., vol. 95, Sep. 2009, 122102.
104. J. D. Caldwell, T. J. Anderson, J. C. Culbertson, G. G. Jernigan, K. D. Hobart, F. J. Kub, M. J. Tadjer, J. L. Tedesco, J. K. Hite, M. A. Mastro, R. L. Myers-Ward, C. R. Eddy, P. M. Campbell, and D. K. Gaskill, "Technique for the dry transfer of epitaxial graphene onto arbitrary substrates," ACS Nano, vol. 4, pp. 1108-1114, Feb. 2010.
105. L. O. Nyakiti, R. L. Myers-Ward, V. D. Wheeler, E. A. Imhoff, F. J. Bezares, H. Chun, J. D. Caldwell, A. L. Friedman, B. R. Matis, J. W. Baldwin, P. M. Campbell, J. C. Culbertson, C. R. Eddy, G. G. Jernigan, and D. K. Gaskill, "Bilayer graphene grown on 4H-SiC (0001) step-free mesas," Nano Lett., vol. 12, pp. 1749-1756, Apr. 2012.
106. L. J. Zhi and K. Mullen, "A bottom-up approach from molecular nanographenes to unconventional carbon materials," J. Mater. Chem., vol. 18, pp. 1472-1484, 2008. (Pubitemid 351434056)
107. X. Jia, J. Campos-Delgado, M. Terrones, V. Meunier, and M. S. Dresselhaus, "Graphene edges: A review of their fabrication and characterization," Nanoscale, vol. 3, pp. 86-95, 2011.
108. L. Chen, Y. Hernandez, X. L. Feng, and K. Mullen, "From nanographene and graphene nanoribbons to graphene sheets: Chemical synthesis," Angewandte ChemieVInt. Ed., vol. 51, pp. 7640-7654, 2012.
109. P. Sutter, M. S. Hybertsen, J. T. Sadowski, and E. Sutter, "Electronic structure of few-layer epitaxial graphene on Ru(0001)," Nano Lett., vol. 9, pp. 2654-2660, Jul. 2009.
110. D. V. Kosynkin, A. L. Higginbotham, A. Sinitskii, J. R. Lomeda, A. Dimiev, B. K. Price, and J. M. Tour, "Longitudinal unzipping of carbon nanotubes to form graphene nanoribbons," Nature, vol. 458, Apr. 2009, 872-U5.
111. M. Lotya, Y. Hernandez, P. J. King, R. J. Smith, V. Nicolosi, L. S. Karlsson, F. M. Blighe, S. De, Z. M. Wang, I. T. McGovern, G. S. Duesberg, and J. N. Coleman, "Liquid phase production of graphene by exfoliation of graphite in surfactant/water solutions," J. Amer. Chem. Soc., vol. 131, pp. 3611-3620, Mar. 2009.
112. S. Yoshii, K. Nozawa, K. Toyoda, N. Matsukawa, A. Odagawa, and A. Tsujimura, "Suppression of inhomogeneous segregation in graphene growth on epitaxial metal films," Nano Lett., vol. 11, pp. 2628-2633, Jul. 2011.
113. D. Knipp, R. A. Street, A. Volkel, and J. Ho, "Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport," J. Appl. Phys., vol. 93, pp. 347-355, Jan. 2003.
114. T. W. Kelley, P. F. Baude, C. Gerlach, D. E. Ender, D. Muyres, M. A. Haase, D. E. Vogel, and S. D. Theiss, "Recent progress in organic electronics: Materials, devices, and processes," Chem. Mater., vol. 16, pp. 4413-4422, Nov. 2004.
115. I. Mejia, A. L. Salas-Villasenor, A. Avendano-Bolivar, J. Horvath, H. Stiegler, B. E. Gnade, and M. A. Quevedo-Lopez, "Low-temperature hybrid CMOS circuits based on chalcogenides and organic TFTs," IEEE Electron Device Lett., vol. 32, no. 8, pp. 1086-1088, Aug. 2011.
116. W. Yanjie, M. Congqin, H. Bo-chao, Z. Jing, L. Wei, P. Youngju, X. Ya-hong, and J. C. S. Woo, "Scalable synthesis of graphene on patterned Ni and transfer," IEEE Trans. Electron Devices, vol. 57, no. 12, pp. 3472-3476, Dec. 2010.
117. Q. K. Yu, L. A. Jauregui, W. Wu, R. Colby, J. F. Tian, Z. H. Su, H. L. Cao, Z. H. Liu, D. Pandey, D. G. Wei, T. F. Chung, P. Peng, N. P. Guisinger, E. A. Stach, J. M. Bao, S. S. Pei, and Y. P. Chen, "Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition," Nature Mater., vol. 10, pp. 443-449, Jun. 2011.
118. X. S. Li, C. W. Magnuson, A. Venugopal, R. M. Tromp, J. B. Hannon, E. M. Vogel, L. Colombo, and R. S. Ruoff, "Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper," J. Amer. Chem. Soc., vol. 133, pp. 2816-2819, Mar. 2011.
119. S. Nie, W. Wu, S. R. Xing, Q. K. Yu, J. M. Bao, S. S. Pei, and K. F. McCarty, "Growth from below: Bilayer graphene on copper by chemical vapor deposition," New J. Phys., vol. 14, Sep. 2012, 093028.
120. J. B. Sun, J. B. Hannon, R. M. Tromp, P. Johari, A. A. Bol, V. B. Shenoy, and K. Pohl, "Spatially-resolved structure and electronic properties of graphene on polycrystalline Ni," ACS Nano, vol. 4, pp. 7073-7077, Dec. 2010.
121. J. M. Cai, P. Ruffieux, R. Jaafar, M. Bieri, T. Braun, S. Blankenburg, M. Muoth, A. P. Seitsonen, M. Saleh, X. L. Feng, K. Mullen, and R. Fasel, "Atomically precise bottom-up fabrication of graphene nanoribbons," Nature, vol. 466, pp. 470-473, Jul. 2010.
122. A. Naeemi and J. D. Meindl, "Conductance modeling for Graphene Nanoribbon (GNR) interconnects," IEEE Electron Device Lett., vol. 28, no. 5, pp. 428-431, May 2007. (Pubitemid 46671077)
123. S. Hong, Y. Yoon, and J. Guo, "Metal-semiconductor junction of graphene nanoribbons," Appl. Phys. Lett., vol. 92, 2008, 083107.
124. A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, and A. K. Geim, "Raman spectrum of graphene and graphene layers," Phys. Rev. Lett., vol. 97, 2006, 187401.
125. C. Casiraghi, S. Pisana, K. S. Novoselov, A. K. Geim, and A. C. Ferrari, "Raman fingerprint of charged impurities in graphene," Appl. Phys. Lett., vol. 91, Dec. 2007, 233108.
126. A. Das, S. Pisana, B. Chakraborty, S. Piscanec, S. K. Saha, U. V. Waghmare, K. S. Novoselov, H. R. Krishnamurthy, A. K. Geim, A. C. Ferrari, and A. K. Sood, "Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor," Nature Nanotechnol., vol. 3, pp. 210-215, Apr. 2008. (Pubitemid 351499403)
127. X. S. Li, W. W. Cai, L. Colombo, and R. S. Ruoff, "Evolution of graphene growth on Ni and Cu by carbon isotope labeling," Nano Lett., vol. 9, pp. 4268-4272, Dec. 2009.
128. Y. M. Lin, A. Valdes-Garcia, S. J. Han, D. B. Farmer, I. Meric, Y. N. Sun, Y. Q. Wu, C. Dimitrakopoulos, A. Grill, P. Avouris, and K. A. Jenkins, "Wafer-scale graphene integrated circuit," Science, vol. 332, pp. 1294-1297, Jun. 2011.
129. Q. Yu, J. Lian, S. Siriponglert, H. Li, Y. P. Chen, and S.-S. Pei, "Graphene segregated on Ni surfaces and transferred to insulators," Appl. Phys. Lett., vol. 93, 2008, 113103.
130. X. K. Lu, M. F. Yu, H. Huang, and R. S. Ruoff, "Tailoring graphite with the goal of achieving single sheets," Nanotechnology, vol. 10, pp. 269-272, Sep. 1999.
131. J. W. Suk, A. Kitt, C. W. Magnuson, Y. F. Hao, S. Ahmed, J. H. An, A. K. Swan, B. B. Goldberg, and R. S. Ruoff, "Transfer of CVD-grown monolayer graphene onto arbitrary substrates," ACS Nano, vol. 5, pp. 6916-6924, Sep. 2011.
132. E. H. Lock, M. Baraket, M. Laskoski, S. P. Mulvaney, W. K. Lee, P. E. Sheehan, D. R. Hines, J. T. Robinson, J. Tosado, M. S. Fuhrer, S. C. Hernandez, and S. G. Waltont, "High-quality uniform dry transfer of graphene to polymers," Nano Lett., vol. 12, pp. 102-107, Jan. 2012.
133. Z. Cheng, Q. Zhou, C. Wang, Q. Li, C. Wang, and Y. Fang, "Toward intrinsic graphene surfaces: A systematic study on thermal annealing and wet-chemical treatment of SiO2-supported graphene devices," Nano Lett., vol. 11, pp. 767-771, 2011.
134. C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone, "Boron nitride substrates for high-quality graphene electronics," Nature Nanotechnol., vol. 5, pp. 722-726, Oct. 2010.
135. G. H. Lee, Y. J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim, and J. Hone, "Electron tunneling through atomically flat and ultrathin hexagonal boron nitride," Appl. Phys. Lett., vol. 99, Dec. 2011, 243114.
136. L. Song, L. J. Ci, H. Lu, P. B. Sorokin, C. H. Jin, J. Ni, A. G. Kvashnin, D. G. Kvashnin, J. Lou, B. I. Yakobson, and P. M. Ajayan, "Large scale growth and characterization of atomic hexagonal boron nitride layers," Nano Lett., vol. 10, pp. 3209-3215, Aug. 2010.
137. T. Taniguchi and K. Watanabe, "Synthesis of high-purity boron nitride single crystals under high pressure by using Ba-BN solvent," J. Crystal Growth, vol. 303, pp. 525-529, May 2007. (Pubitemid 46617564)
138. I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, "Current saturation in zero-bandgap, topgated graphene field-effect transistors," Nature Nanotechnol., vol. 3, pp. 654-659, Nov. 2008.
139. F. Schwierz, "Graphene transistors," Nature Nanotechnol., vol. 5, pp. 487-496, Jul. 2010.
140. H. J. Dai, A. Javey, E. Pop, D. Mann, W. Kim, and Y. R. Lu, "Electrical transport properties and field effect transistors of carbon nanotubes," NANO: Brief Rep. Rev., vol. 1, pp. 1-13, Jul. 2006.
141. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. J. Dai, "High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates," Nature Mater., vol. 1, pp. 241-246, Dec. 2002.
142. R. L. Puurunen, "Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process," J. Appl. Phys., vol. 97, Jun. 2005, 121301.
143. D. B. Farmer and R. G. Gordon, "Atomic layer deposition on suspended single-walled carbon nanotubes via gas-phase noncovalent functionalization, " Nano Lett., vol. 6, pp. 699-703, Apr. 2006.
144. J. Kong, N. R. Franklin, C. W. Zhou, M. G. Chapline, S. Peng, K. J. Cho, and H. J. Dai, "Nanotube molecular wires as chemical sensors," Science, vol. 287, pp. 622-625, Jan. 2000. (Pubitemid 30070903)
145. S. Peng and K. J. Cho, "Chemical control of nanotube electronics," Nanotechnology, vol. 11, pp. 57-60, Jun. 2000.
146. Y. Xuan, Y. Q. Wu, T. Shen, M. Qi, M. A. Capano, J. A. Cooper, and P. D. Ye, "Atomic-layer-deposited nanostructures for graphene-based nanoelectronics," Appl. Phys. Lett., vol. 92, Jan. 2008, 013101.
147. J. R. Williams, L. DiCarlo, and C. M. Marcus, "Quantum hall effect in a gate-controlled p-n junction of graphene," Science, vol. 317, pp. 638-641, Aug. 2007. (Pubitemid 47240916)
148. Y. M. Lin, K. A. Jenkins, A. Valdes-Garcia, J. P. Small, D. B. Farmer, and P. Avouris, "Operation of graphene transistors at gigahertz frequencies," Nano Lett., vol. 9, pp. 422-426, Jan. 2009.
149. A. Pirkle, S. McDonnell, B. Lee, J. Kim, L. Colombo, and R. Wallace, "The effect of graphite surface condition on the composition of Al2O3 by atomic layer deposition," Appl. Phys. Lett., vol. 97, 2010, 082901.
150. L. Liu, S. M. Ryu, M. R. Tomasik, E. Stolyarova, N. Jung, M. S. Hybertsen, M. L. Steigerwald, L. E. Brus, and G. W. Flynn, "Graphene oxidation: Thickness-dependent etching and strong chemical doping," Nano Lett., vol. 8, pp. 1965-1970, Jul. 2008.
151. S. Adam, E. H. Hwang, V. M. Galitski, and S. Das Sarma, "A self-consistent theory for graphene transport," Proc. Nat. Acad. Sci. USA, vol. 104, pp. 18392-18397, Nov. 2007. (Pubitemid 350210707)
152. G. Lee, B. Lee, J. Kim, and K. Cho, "Ozone adsorption on graphene: Ab initio study and experimental validation," J. Phys. Chem. C, vol. 113, pp. 14225-14229, Aug. 2009.
153. S. Jandhyala, G. Mordi, B. Lee, G. Lee, C. Floresca, P.-R. Cha, J. Ahn, R. M. Wallace, Y. J. Chabal, M. J. Kim, L. Colombo, K. Cho, and J. Kim, "Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone," ACS Nano, vol. 6, pp. 2722-2730, 2012.
154. S. McDonnell, A. Pirkle, J. Kim, L. Colombo, and R. M. Wallace, "Trimethyl-aluminum and ozone interactions with graphite in atomic layer deposition of Al2O3," J. Appl. Phys., vol. 112, Nov. 2012, 104110.
155. X. R. Wang, S. M. Tabakman, and H. J. Dai, "Atomic layer deposition of metal oxides on pristine and functionalized graphene," J. Amer. Chem. Soc., vol. 130, pp. 8152-8153, Jul. 2008. (Pubitemid 351898526)
156. J. M. P. Alaboson, Q. H. Wang, J. D. Emery, A. L. Lipson, M. J. Bedzyk, J. W. Elam, M. J. Pellin, and M. C. Hersam, "Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers," ACS Nano, vol. 5, pp. 5223-5232, Jun. 2011.
157. B. Ozyilmaz, P. Jarillo-Herrero, D. Efetov, and P. Kim, "Electronic transport in locally gated graphene nanoconstrictions," Appl. Phys. Lett., vol. 91, Nov. 2007, 192107.
158. JSR Micro, IncNFC 1400-3CP, Sunnyvale, CA, USA.
159. D. B. Farmer, H. Y. Chiu, Y. M. Lin, K. A. Jenkins, F. N. Xia, and P. Avouris, "Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors," Nano Lett., vol. 9, pp. 4474-4478, Dec. 2009.
160. M. P. Seah and S. J. Spencer, "Ultrathin SiO2 on Si. I. Quantifying and removing carbonaceous contamination," J. Vac. Sci. Technol. A, vol. 21, pp. 345-352, Mar.-Apr. 2003.
161. S. Ingrey, "III-V surface processing," J. Vac. Sci. Technol. A, vol. 10, 1992, article 829.
162. F. A. Stevie, E. P. Martin, P. M. Kahora, J. T. Cargo, A. K. Nanda, A. S. Harrus, A. J. Muller, and H. W. Krautter, "Boron contamination of surfaces in silicon microelectronics processingV Characterization and causes," J. Vac. Sci. Technol. A, Vac. Surf. Films, vol. 9, pp. 2813-2816, Sep.-Oct. 1991.
163. G. D. Wilk, R. M. Wallace, and J. M. Anthony, "High-κ gate dielectrics: Current status and materials properties considerations," J. Appl. Phys., vol. 89, pp. 5243-5275, May 2001. (Pubitemid 33598307)
164. S. Ramanathan, C. M. Park, and P. C. McIntyre, "Electrical properties of thin film zirconia grown by ultraviolet ozone oxidation," J. Appl. Phys., vol. 91, pp. 4521-4527, Apr. 2002.
165. A. Chin, Y. H. Wu, S. B. Chen, C. C. Liao, and W. J. Chen, "High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 Angstrom," in Dig. Tech. Papers IEEE Symp. Very Large Scale Integr. Technol., 2000, pp. 16-17.
166. M. J. Dignam, W. R. Fawcett, and H. Bohni, "Kinetics and mechanism of oxidation of superpurity aluminum in dry oxygen. I. Apparatus description and growth of amorphous oxide," J. Electrochem. Soc., vol. 113, pp. 656-662, 1966.
167. B. Fallahazad, K. Lee, G. Lian, S. Kim, C. M. Corbet, D. A. Ferrer, L. Colombo, and E. Tutuc, "Scaling of Al2O3 dielectric for graphene field-effect transistors," Appl. Phys. Lett., vol. 100, 2012, 093112-4.
168. M. C. Lemme, T. J. Echtermeyer, M. Baus, and H. Kurz, "A graphene field-effect device," IEEE Electron Device Lett., vol. 28, no. 4, pp. 282-284, Apr. 2007.
169. M. C. Lemme, T. J. Echtermeyer, M. Baus, B. N. Szafranek, J. Bolten, M. Schmidt, T. Wahlbrink, and H. Kurz, "Mobility in graphene double gate field effect transistors," Solid-State Electron., vol. 52, pp. 514-518, Apr. 2008. (Pubitemid 351380360)
170. S. Banerjee, M. Sardar, N. Gayathri, A. K. Tyagi, and B. Raj, "Enhanced conductivity in graphene layers and at their edges," Appl. Phys. Lett., vol. 88, Feb. 2006, 602111.
171. Y. W. Zhang, L. Wan, X. H. Cheng, Z. J. Wang, C. Xia, D. Cao, T. T. Jia, and Y. H. Yu, "Studies on H2O-based atomic layer deposition of Al2O3 dielectric on pristine graphene," J. Inorganic Mater., vol. 27, pp. 956-960, Sep. 2012.
172. J. A. Wilson and A. D. Yoffe, "Transition metal dichalcogenide discussion and interpretation of observed optical, electrical, and structural properties," Adv. Phys., vol. 18, pp. 193-335, 1969.
173. V. Podzorov, M. E. Gershenson, C. Kloc, R. Zeis, and E. Bucher, "High-mobility field-effect transistors based on transition metal dichalcogenides," Appl. Phys. Lett., vol. 84, pp. 3301-3303, 2004.
174. A. Ayari, E. Cobas, O. Ogundadegbe, and M. S. Fuhrer, "Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides," J. Appl. Phys., vol. 101, 2007, 014507.
175. D. Briggs and M. P. Seah, Practical Surface Analysis, 2nd ed. New York, NY, USA: Wiley, 1990, vol. I.
176. "Qualitative inorganic analysis. By A. J. Berry, M. A. Pp. viii+147. Cambridge: University Press, 1937. 6s," J. Soc. Chem. Ind., vol. 57, pp. 398-399, 1938.
177. B. Fallahazad, S. Kim, L. Colombo, and E. Tutuc, "Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric," Appl. Phys. Lett., vol. 97, 2010, 123105-3.
178. S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, and S. K. Banerjee, "Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric," Appl. Phys. Lett., vol. 94, 2009, 062107.
179. Q. Chen, H. Huang, W. Chen, A. T. S. Wee, Y. P. Feng, J. W. Chai, Z. Zhang, J. S. Pan, and S. J. Wang, "In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate," Appl. Phys. Lett., vol. 96, 2010, 072111-3.
180. L. Liao, J. Bai, Y. Qu, Y.-C. Lin, Y. Li, Y. Huang, and X. Duan, "High-κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors," Proc. Nat. Acad. Sci., vol. 107, pp. 6711-6715, Apr. 13, 2010.
181. G. Mordi, S. Jandhyala, C. Floresca, S. McDonnell, M. J. Kim, R. M. Wallace, L. Colombo, and J. Kim, "Low-kappa organic layer as a top gate dielectric for graphene field effect transistors," Appl. Phys. Lett., vol. 100, 2012, 193117-3.
182. A. Venugopal, L. Colombo, and E. M. Vogel, "Contact resistance in few and multilayer graphene devices," Appl. Phys. Lett., vol. 96, 2010, 013512.
183. A. Venugopal, L. Colombo, and E. M. Vogel, "Issues with characterizing transport properties of graphene field effect transistors," Solid State Commun., vol. 152, pp. 1311-1316, Aug. 2012.
184. K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, "Systematic investigation of the intrinsic channel properties and contact resistance of monolayer and multilayer graphene field-effect transistor," Jpn. J. Appl. Phys., vol. 49, May 2010, 051304.
185. F. N. Xia, V. Perebeinos, Y. M. Lin, Y. Q.Wu, and P. Avouris, "The origins and limits of metal-graphene junction resistance," Nature Nanotechnol., vol. 6, pp. 179-184, Mar. 2011.
186. K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, "Metal/graphene contact as a performance killer of ultra-high mobility grapheneVAnalysis of intrinsic mobility and contact resistance," in Proc. IEEE Int. Electron Devices Meeting, 2009, pp. 527-530.