Analytical modeling of uniaxial strain effects on the performance of double-gate graphene nanoribbon field-effect transistors

Nanoscale Research Letters

Volumn 9, Issue 1, 2014, Pages 1-11

  Kliros, George S ^a  

^a HELLENIC AIR FORCE ACADEMY   (Greece)

Author keywords

Analytic ballistic model; Device performance metrics; Graphene nanoribbons FETs; Uniaxial strain

Indexed keywords

ANALYTICAL MODELS; BALLISTICS; CAPACITANCE; CUTOFF FREQUENCY; DRAIN CURRENT; ENERGY GAP; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHENE TRANSISTORS; NANORIBBONS;

ANALYTICAL EXPRESSIONS; BALLISTIC MODEL; DEVICE PERFORMANCE; EFFECTIVE MASS APPROXIMATION; GRAPHENE NANORIBBONS; STRAIN-INDUCED CHANGE; UNI-AXIAL STRAINS; UNIAXIAL TENSILE STRAIN;

TENSILE STRAIN;

EID: 84897822662     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-9-65     Document Type: Article

References (42)

1. Castro Neto AH, Guinea F, Peres NMR, Novoselov KS, Geim AK:The electronic properties of graphene. Rev Mod Phys 2009,81:109-162.
2. Chae J, Haa J, BaekH, KukY, Jung SY, Song YJ, Zhitenev NB, StroscioJA, Wooc SJ, Son YW: Graphene: materials to devices. Microelectron Eng 2011,88:1211-1213.
3. Dragoman M, Neculoiu D, Dragoman D, Deligeorgis G, Konstantinidis G, Cismaru A, Coccetti F, Plana R: Graphene for microwaves. IEEE Microwave Mag 2010,11:81-86.
4. Han MY, Ozyilmaz B, Zhang Y, Kim P: Energy band gap engineering of graphene nanoribbons. Phys Rev Lett 2007,98:206805.
5. Wang X, Ouyang Y, Li X, Wang H, GuoJ, Dai H: Room temperature all semiconducting sub-10 nm graphene nanoribbon field effect transistors. Phys Rev Lett 2008,100:206803.
6. Son YW, Cohen M, Louie S: Energy gaps in graphene nanoribbons. Phys Rev Lett 2006, 97:216803.
7. Lee ML, Fitzgerald EA, Bulsara MT, Currie MT, Lochtefeld A: Strained Si, SiGe, and Ge channels for high mobility metal oxide semiconductor field effect transistors. J Appl Phys 2005, 97:011101.
8. Pereira VM, Castro Neto AH: Strain engineering of graphene's electronic structure. Phys Rev Lett 2009, 103:046801.
9. Choi SM, Jhi SH, Son YM: Effects of strain on electronic properties of graphene. Phys Rev B 2010, 81:081407.
10. Hossain MZ: Quantum conductance modulation in graphene by strain engineering. Appl Phys Lett 2010, 96:143118.
11. Sun L, Li Q, Ren H, Shi QW, Yang J, Hou JG: Strain effect on energy gaps of armchair graphene nanoribbons. J Chem Phys 2008, 129:074704.
12. Ni ZH, Yu T, Lu YH, Wang YY, Feng YP, Shen ZX: Uniaxial strain on graphene:raman spectroscopy study and band-gap opening. ACS Nano 2008, 2(11):2301-2305.
13. Tsoukleri G, Parthenios J, Papagelis K, Jalil R, Ferrari AC, Geim AK, Novoselov KS, Galiotis C: Subjecting a graphene monolayer to tension and compression. Small 2009, 5(21):2397-2402.
14. Huang M, Yan H, Chen C, Song D, Heinz TF, Hone J: Spectroscopy of graphene under uniaxial stress: phonon softening and determination of the crystallographic orientation. Proc Nat Acad Sci 2009, 106:7304.
15. Guinea F, Katsnelson MI, Geim AK: Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering. Nat Phys 2010, 6:30-33.
16. Lu Y, Guo J: Band gap of strained graphene nanoribbons. Nano Res 2010, 3:189-199.
17. Li Y, Jiang X, Liu Z, Liu Zh: Strain effects in graphene and graphene nanoribbons: the underlying mechanism. Nano Res 2010, 3:545-556.
18. Rosenkranz N, Mohr M, Thomsen Ch: Uniaxial strain in graphene and armchair graphene nanoribbons: an ab initio study. Ann Phys (Berlin) 2011, 523:137-144.
19. Ma F, Guo Z, Xu K, Chu PK: First-principle study of energy band structure of armchair graphene nanoribbons. Solid State Commun 2012, 152:1089-1093.
20. Peng XH, Velasquez S: Strain modulated band gap of edge passivated armchair graphene nanoribbons. Appl Phys Lett 2011, 98:023112.
21. Alam K: Uniaxial strain effects on the performance of a ballistic top gate graphene nanoribbon on insulator transistor. IEEE Trans Nanotechnol 2009, 8:528-534.
22. Topsakal M, Bagci VMK, Ciraci S: Current-Voltage characteristics of armchair graphene nanoribbons under uniaxial strain. Phys Rev B 2010, 81:205437.
23. Moslemi MR, Sheikhi MH, Saghafi K: Moravvej-Farshi MK:Electronic properties of a dual gated GNR-FET under uniaxial tensile strain. Microel Reliability 2012, 52:2579-2584.
24. Wu G, Wang Z, Jing Y, Wang C: I-V curves of graphene nanoribbons under uniaxial compressive and tensile strain. Chem Phys Lett 2013, 559:82-87.
25. Zhao P, Choudhury M, Mohanram K, Guo J: Computational model of edge effects in graphene nanoribbon transistors. Nano Res 2008, 1:395-402.
26. Kliros GS: Gate capacitance modeling and width-dependent performance of graphene nanoribbon transistors. Microelectron Eng 2013, 112:220-226.
27. Mohammadpour H, Asgari A: Numerical study of quantum transport in the double gate graphene nanoribbon field effect transistors. Physica E 2011, 43:1708-1711.
28. Knoch J, Riess W, Appenzeller J: Outperforming the conventional scaling rules in the quantum capacitance limit. IEEE Elect Dev Lett 2008, 29:372-375.
29. Gunlycke D, White CT: Tight-binding energy dispersions of armchair-edge graphene nanostrips. Phys Rev B 2008, 77:115116.
30. Harrison WA: Electronic structure and the properties of solids: The physics of the chemical bond. New York: Dover Publications; 1989.
31. Blakslee OL, Proctor DG, Seldin EJ, Spence GB, Weng T: Elastic constants of compression-annealed pyrolytic graphite. J Appl Phys 1970, 41:3373-3382.
32. Wang J, Zhao R, Yang M, Liu Z: Inverse relationship between carrier mobility and bandgap in graphene. J Chem Phys 2013, 138:084701.
33. Kliros GS: Modeling of carrier density and quantum capacitance in graphene nanoribbon FETs. In Proc of 21th IEEE Int. Conf. on Microelectronics (ICM). Cairo; 19-22 Dec 2010:236-239.
34. Natori K, Kimura Y, Shimizu T: Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor. J Appl Phys 2005, 97:034306.
35. Guo J, Yoon Y: Ouyang Y:Gate electrostatics and quantum capacitance of GNRs. Nano Lett 2007, 7:1935-1940.
36. Natori K: Compact modeling of ballistic nanowire MOSFETs. IEEE Trans Elect Dev 2008, 55:2877-2885.
37. Kliros GS: Influence of density inhomogeneity on the quantum capacitance of graphene nanoribbon field effect transistors. Superlattice Microst 2012, 52:1093-1102.
38. Burke P: AC performance of nanoelectronics: towards a ballistic THz nanotube transistor. Solid State Electron 2004, 48:1981-1986.
39. Chauhan J, Guo J: Assessment of high-frequency performance limits of graphene field-effect transistors. Nano Res 2011, 4:571-579.
40. Knoch J, Chen Z, Appenzeller J: Properties of metal-graphene contacts. IEEE Trans Nanotechn 2012, 11:513-519.
41. Dragoman D, Dragoman M: Time flow in graphene and its implications on the cutoff frequency of ballistic graphene devices. J Appl Phys 2011, 110:014302.
42. Zhang Y, Liu F: Maximum asymmetry in strain induced mechanical instability of graphene: compression versus tension. Appl Phys Lett 2011, 99:241908.