Influence of density inhomogeneity on the quantum capacitance of graphene nanoribbon field effect transistors

Superlattices and Microstructures

Volumn 52, Issue 6, 2012, Pages 1093-1102

  Kliros, G S ^a  

^a HELLENIC AIR FORCE ACADEMY   (Greece)

Author keywords

Electron hole puddles; Gate capacitance; Graphene FETs; Graphene nanoribbons; Quantum capacitance

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; ELECTRON HOLE; GATE CAPACITANCE; GRAPHENE NANO-RIBBON; GRAPHENE NANORIBBONS; INFLUENCE OF DENSITY; INHOMOGENEITIES; INSULATOR THICKNESS; MULTI-PEAKS; NUMERICAL RESULTS; POTENTIAL FLUCTUATIONS; QUANTUM CAPACITANCE; SEMI-ANALYTICAL MODEL;

CAPACITANCE; FIELD EFFECT TRANSISTORS;

GRAPHENE;

EID: 84866536114     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2012.07.001     Document Type: Article

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