Modeling of carrier density and quantum capacitance in graphene nanoribbon FETs

Proceedings of the International Conference on Microelectronics, ICM

Volumn , Issue , 2010, Pages 236-239

  Kliros, George S ^a  

^a HELLENIC AIR FORCE ACADEMY   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; DENSITY OF STATE; DEVICE PHYSICS; DIELECTRIC CONSTANTS; ELECTRON HOLE; GATE VOLTAGES; GAUSSIAN BROADENING; GRAPHENE NANO-RIBBON; NANOSCALE TRANSISTORS; PHENOMENOLOGICAL MODELS; QUANTUM CAPACITANCE;

CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC POTENTIAL; GRAPHENE; MICROELECTRONICS; VOLTAGE REGULATORS;

FIELD EFFECT TRANSISTORS;

EID: 79951695472     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICM.2010.5696126     Document Type: Conference Paper

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