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Volumn 112, Issue , 2013, Pages 220-226
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Gate capacitance modeling and width-dependent performance of graphene nanoribbon transistors
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Author keywords
Analytic ballistic model; Gate capacitance; Graphene FETs; Graphene nanoribbons; Performance metrics
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Indexed keywords
BALLISTIC MODEL;
GATE CAPACITANCE;
GRAPHENE FETS;
GRAPHENE NANORIBBONS;
PERFORMANCE METRICS;
BALLISTICS;
CAPACITANCE;
CUTOFF FREQUENCY;
GRAPHENE;
NANORIBBONS;
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EID: 84884813791
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2013.04.011 Document Type: Article |
Times cited : (37)
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References (27)
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