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Volumn 112, Issue , 2013, Pages 220-226

Gate capacitance modeling and width-dependent performance of graphene nanoribbon transistors

Author keywords

Analytic ballistic model; Gate capacitance; Graphene FETs; Graphene nanoribbons; Performance metrics

Indexed keywords

BALLISTIC MODEL; GATE CAPACITANCE; GRAPHENE FETS; GRAPHENE NANORIBBONS; PERFORMANCE METRICS;

EID: 84884813791     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.04.011     Document Type: Article
Times cited : (37)

References (27)
  • 22
    • 79951695472 scopus 로고    scopus 로고
    • Modeling of carrier density and quantum capacitance in graphene nanoribbon FETs
    • Cairo, Egypt
    • G.S. Kliros, Modeling of carrier density and quantum capacitance in graphene nanoribbon FETs, In: Proc. of 21th IEEE Int. Conf. on Microelectronics (ICM), Cairo, Egypt, 2010, pp. 236-239.
    • (2010) Proc. of 21th IEEE Int. Conf. on Microelectronics (ICM) , pp. 236-239
    • Kliros, G.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.