Graphene: Materials to devices (invited)

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1211-1213

  Chae, J ^b   Ha, J ^a,b   Baek, H ^a   Kuk, Y ^a   Jung, S Y ^b   Song, Y J ^b   Zhitenev, N B ^b   Stroscio, J A ^b   Woo, S J ^c   Son, Y W ^c  

^a Seoul National University   (South Korea)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c Korea Institute for Advanced Study   (South Korea)

Author keywords

Carrier scattering; Gate insulator; Graphene device; Scanning probe microscopy

Indexed keywords

CARRIER SCATTERING; GATE INSULATOR; GEOMETRIC STRUCTURE; GRAPHENE DEVICE; GRAPHENE DEVICES; LOCAL TRANSPORT; MACROSCOPIC TRANSPORT; RECENT PROGRESS; SCANNING GATE MICROSCOPY; SCANNING PROBES; SCATTERING CENTERS; SCATTERING MODEL;

DANGLING BONDS; DEFECTS; ELECTRON SCATTERING; ELECTRONIC STRUCTURE; GEOMETRY; POINT DEFECTS; PROBES; SCANNING PROBE MICROSCOPY; SILICON COMPOUNDS; TRANSPORT PROPERTIES;

GRAPHENE;

EID: 79958061196     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.159     Document Type: Conference Paper

References (30)

1. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, and S.V. Dubonos Science 306 2004 666 669
2. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, M.I. Katsnelson, and I.V. Grigorieva Nature 438 2005 197 200
3. Y. Zhang, Y. Tan, H.L. Stormer, and P. Kim Nature 438 2005 201 204
4. K.S. Novoselov, D. Jiang, F. Schedin, T.J. Booth, V.V. Khotkevich, and S.V. Morozov Proc. Natl. Acad. Sci. (USA) 102 2005 10451 10453
5. A.H. Castro Neto, F. Guinea, and N.M.R. Peres Phys. World 19 2006 33 37
6. V.P. Gusynin, and S.G. Sharapov Phys. Rev. Lett. 95 2005 146801
7. N.M.R. Peres, F. Guinea, and A.H. Castro Neto Phys. Rev. B 73 2006 125411
8. M.I. Katsnelson, K.S. Novoselov, and A.K. Geim Nat. Phys. 2 2006 620 625
9. M. Katsnelson, and K. Novoselov Solid State Commun. 143 2007 3 13
10. A.F. Young, and P. Kim Nat. Phys. 5 2009 222 226
11. K. Bolotin, K. Sikes, Z. Jiang, M. Klima, G. Fudenberg, and J. Hone Solid State Commun. 146 2008 351 355
12. X. Du, I. Skachko, A. Barker, and E.Y. Andrei Nat. Nano. 3 2008 491 495
13. M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, and D.K. Maude Phys. Rev. Lett. 101 2008 267601
14. K.I. Bolotin, F. Ghahari, M.D. Shulman, H.L. Stormer, and P. Kim Nature 462 2009 196 199
15. X. Du, I. Skachko, F. Duerr, A. Luican, and E.Y. Andrei Nature 462 2009 192 195
16. D.L. Miller, K.D. Kubista, G.M. Rutter, M. Ruan, W.A. de Heer, and P.N. First Science 324 2009 924 927
17. Y. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, and E.H. Hwang Phys. Rev. Lett. 99 2007 246803
18. J. Chen, C. Jang, S. Xiao, M. Ishigami, and M.S. Fuhrer Nat. Nanotechnol. 3 2008 206 209
19. J. Chen, C. Jang, M. Ishigami, S. Xiao, W. Cullen, and E. Williams Solid State Commun. 149 2009 1080 1086
20. J. Lee, J. Chae, C.K. Kim, H. Kim, S. Oh, and Y. Kuk Rev. Sci. Instrum. 76 2005 093701
21. Y. Zhang, V.W. Brar, C. Girit, A. Zettl, and M.F. Crommie Nat. Phys. 5 2009 722 726
22. N. Shon, and T. Ando J. Phys. Soc. Jpn. 67 1998 2421 2429
23. M. Ishigami, J.H. Chen, W.G. Cullen, M.S. Fuhrer, and E.D. Williams Nano Lett. 7 2007 1643 1648
24. M. Katsnelson, and A. Geim Philos. Trans. Roy. Soc. (Phys. Eng. Sci.) 366 2008 195 204
25. J. Chen, C. Jang, S. Adam, M.S. Fuhrer, E.D. Williams, and M. Ishigami Nat. Phys. 4 2008 377 381
26. L.A. Ponomarenko, R. Yang, T.M. Mohiuddin, M.I. Katsnelson, K.S. Novoselov, and S.V. Morozov Phys. Rev. Lett. 102 2009 206603
27. J. Yan, Y. Zhang, P. Kim, and A. Pinczuk Phys. Rev. Lett. 98 2007 166802
28. C. Jang, S. Adam, J. Chen, E.D. Williams, S. Das Sarma, and M.S. Fuhrer Phys. Rev. Lett. 101 2008 146805
29. J. Martin, N. Akerman, G. Ulbricht, T. Lohmann, J.H. Smet, and K. von Klitzing Nat. Phys. 4 2008 144 148
30. E. Rossi, S. Adam, and S. Das Sarma Phys. Rev. B 79 2009 245423