Electronic properties of a dual-gated GNR-FET under uniaxial tensile strain

Microelectronics Reliability

Volumn 52, Issue 11, 2012, Pages 2579-2584

  Moslemi, Mohammad Reza ^a   Sheikhi, Mohammad Hossein ^b   Saghafi, Kamyar ^c   Moravvej Farshi, Mohammad Kazem ^d  

^a ISLAMIC AZAD UNIVERSITY   (Iran)

^b SHIRAZ UNIVERSITY   (Iran)

^c SHAHED UNIVERSITY   (Iran)

^d TARBIAT MODARES UNIVERSITY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC REGIME; IV CHARACTERISTICS; MODE-SPACE REPRESENTATION; NANORIBBONS; NON-EQUILIBRIUM GREEN'S FUNCTION; SELF-CONSISTENT SOLUTION; SWITCHING CHARACTERISTICS; TIGHT-BINDING HAMILTONIANS; UNI-AXIAL STRAINS; UNIAXIAL TENSILE STRAIN;

ELECTRONIC PROPERTIES; ENERGY GAP; FIELD EFFECT TRANSISTORS; POISSON EQUATION;

HAMILTONIANS;

EID: 84867576870     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.05.009     Document Type: Article

References (34)

1. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, and S.V. Dubonos Electric field effect in atomically thin carbon films Science 306 2004 666 669
2. R. Kundu Tight binding parameters for graphene Mod Phys Lett B 25 2011 163 173
3. D. Gunlycke, and C. White Tight-binding energy dispersions of armchair-edge graphene nanostrips Phys Rev B 77 2008 115116
4. M.C. Lemme, T.J. Echtermeyer, M. Baus, and H. Kurz A graphene field-effect device IEEE Electron Device Lett 28 2007 282 284
5. G. Liang, N. Neophytou, M.S. Lundstrom, and D.E. Nikonov Ballistic graphene nanoribbon MOSFETs: a full quantum real-space transport simulation J Appl Phys 102 2007 054307
6. D. Unluer, F. Tseng, A. Ghosh, and M. Stan Monolithically patterned wide-narrow-wide all-graphene devices IEEE Trans Nanotechnol 10 2011 931 939
7. X. Wang, Y. Ouyang, X. Li, H. Wang, J. Guo, and H. Dai Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors Phys Rev Lett 100 2008 206803
8. P. Zhao, and J. Guo Modeling edge effects in graphene nanoribbon field-effect transistors with real and mode space methods J Appl Phys 105 2009 034503 034507
9. Y.M. Lin, C. Dimitrakopoulos, K.A. Jenkins, D.B. Farmer, H.Y. Chiu, and A. Grill 100 GHz transistors from wafer-scale epitaxial graphene Science 327 2010 662
10. Y.S. Shin, J.Y. Son, M.H. Jo, Y.H. Shin, and H.M. Jang High-mobility graphene nanoribbons prepared using polystyrene dip-pen nanolithography J Am Chem Soc 133 2011 5623 5625
11. J. Kang, Y. He, J. Zhang, X. Yu, X. Guan, and Z. Yu Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors Appl Phys Lett 96 2010 252105
12. B. Biel, X. Blase, F. Triozon, and S. Roche Anomalous doping effects on charge transport in graphene nanoribbons Phys Rev Lett 102 2009 096803
13. B. Huang, Q. Yan, G. Zhou, J. Wu, B.L. Gu, and W. Duan Making a field effect transistor on a single graphene nanoribbon by selective doping Appl Phys Lett 91 2007 253122
14. Y.W. Son, M.L. Cohen, and S.G. Louie Half-metallic graphene nanoribbons Nature 444 2006 347 349
15. N. Ferralis, R. Maboudian, and C. Carraro Evidence of structural strain in epitaxial graphene layers on 6H-SiC (0001) Phys Rev Lett 101 2008 156801
16. 2 Nano Lett 9 2009 2542 2546
17. R. Ribeiro, V.M. Pereira, N. Peres, P. Briddon, and A. Castro Neto Strained graphene: tight-binding and density functional calculations New J Phys 11 2009 115002
18. M. Topsakal, S. Cahangirov, and S. Ciraci The response of mechanical and electronic properties of graphane to the elastic strain Appl Phys Lett 96 2010 091912
19. Y. Gao, and P. Hao Mechanical properties of monolayer graphene under tensile and compressive loading Physica E 41 2009 1561 1566
20. V.M. Pereira, A.H.C. Neto, and N. Peres Tight-binding approach to uniaxial strain in graphene Phys Rev B 80 2009 045401
21. M. Topsakal, V.M.K. Bagci, and S. Ciraci Current-voltage (IV) characteristics of armchair graphene nanoribbons under uniaxial strain Phys Rev B 81 2010 205437
22. S.M. Choi, S.H. Jhi, and Y.W. Son Effects of strain on electronic properties of graphene Phys Rev B 81 2010 081407
23. Y. Ouyang, Y. Yoon, and J. Guo Scaling behaviors of graphene nanoribbon FETs: a three-dimensional quantum simulation study IEEE Trans Electron Dev 54 2007 2223 2231
24. M.R. Choudhury, Y. Yoon, J. Guo, and K. Mohanram Graphene nanoribbon fets: technology exploration for performance and reliability IEEE Trans Nanotechnol 10 2011 727 736
25. Y. Lu, and J. Guo Band gap of strained graphene nanoribbons Nano Res 3 2010 189 199
26. C. Metzger, S. Rémi, M. Liu, S.V. Kusminskiy, A.H. Castro Neto, and A.K. Swan Biaxial strain in graphene adhered to shallow depressions Nano Lett 10 2009 6 10
27. Z.H. Ni, T. Yu, Y.H. Lu, Y.Y. Wang, Y.P. Feng, and Z.X. Shen Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening ACS Nano 2 2008 2301 2305
28. G. Fiori, and G. Iannaccone Simulation of graphene nanoribbon field-effect transistors IEEE Electron Device Lett 28 2007 760 762
29. K. Alam Uniaxial strain effects on the performance of a ballistic top gate graphene nanoribbon on insulator transistor IEEE Trans Nanotechnol 8 2009 528 534
30. Zhao P, Choudhury M, Mohanram K, Guo J. Analytical theory of graphene nanoribbon transistors. In: IEEE International workshop on design and test of nano devices, circuits and systems, vol. 3; 2008. p. 3-6.
31. P. Zhao, M. Choudhury, K. Mohanram, and J. Guo Computational model of edge effects in graphene nanoribbon transistors Nano Res 1 2008 395 402
32. M. Farjam, and H. Rafii-Tabar Comment on "band structure engineering of graphene by strain: first-principles calculations" Phys Rev B 80 2009 167401
33. Y. Li, X. Jiang, Z. Liu, and Z. Liu Strain effects in graphene and graphene nanoribbons: the underlying mechanism Nano Res 3 2010 545 556
34. J. Guo, S. Datta, M. Lundstrom, and M. Anantam Toward multiscale modeling of carbon nanotube transistors Int J Multiscale Comput Eng 2 2004 257 276