Uniaxial strain effects on the performance of a ballistic top gate graphene nanoribbon on insulator transistor

IEEE Transactions on Nanotechnology

Volumn 8, Issue 4, 2009, Pages 528-534

  Alam, Khairul ^a  

^a EAST WEST UNIVERSITY   (Bangladesh)

Author keywords

Graphene nanoribbon (GNR) on insulator transistor; Nonequilibrium Green's function (NEGF) formalism; Performance of GNR transistor; Strain effects

Indexed keywords

BAND GAPS; GRAPHENE NANO-RIBBON; GRAPHENE NANORIBBON (GNR) ON INSULATOR TRANSISTOR; NANORIBBON; NONEQUILIBRIUM GREEN'S FUNCTION (NEGF) FORMALISM; OFF CURRENT; OFF-STATE CURRENT; ON CURRENTS; ON STATE CURRENT; ON/OFF CURRENT RATIO; ORBITAL BASIS; PERFORMANCE OF GNR TRANSISTOR; QUANTUM SIMULATIONS; STRAIN EFFECTS; STRAIN ENGINEERING; SWITCHING DELAY; SWITCHING PERFORMANCE; TOP GATE; TURNING POINTS; UNI-AXIAL STRAINS;

BALLISTICS; CUTOFF FREQUENCY; DIFFERENTIAL EQUATIONS; ENERGY GAP; GREEN'S FUNCTION; QUANTUM CHEMISTRY;

FIELD EFFECT TRANSISTORS;

EID: 67949100403     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.2011811     Document Type: Article

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