Numerical study of quantum transport in the double-gate graphene nanoribbon field effect transistors

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 43, Issue 9, 2011, Pages 1708-1711

  Mohammadpour, Hakimeh ^a   Asgari, Asghar ^b,c  

^a INSTITUTE FOR ADVANCED STUDIES IN BASIC SCIENCES IASBS   (Iran)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^c UNIVERSITY OF TABRIZ   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC PERFORMANCE; BASIS SETS; CUT-OFF; DOUBLE-GATE; GRAPHENE NANO-RIBBON; INTRINSIC CHANNEL; IV CHARACTERISTICS; NON EQUILIBRIUM; NUMERICAL STUDIES; QUANTUM TRANSPORT; SIMULATED MODEL; SOURCE AND DRAIN EXTENSIONS; SOURCE AND DRAINS; TRANSPORT EQUATION;

BALLISTICS; COMPUTER SIMULATION; GRAPHENE; MOS DEVICES; POISSON EQUATION; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS;

FIELD EFFECT TRANSISTORS;

EID: 79959897428     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2011.05.027     Document Type: Article

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