Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme

Optics Letters

Volumn 39, Issue 4, 2014, Pages 805-808

  Huang, Chun Ying ^a   Lee, Ya Ju ^b   Lin, Tai Yuan ^c   Chang, Shao Lun ^c   Lian, Jan Tian ^c   Lin, Hsiu Mei ^c   Chen, Nie Chuan ^d   Yang, Ying Jay ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^d CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COATINGS; COST EFFECTIVENESS; DOPING (ADDITIVES); GALLIUM NITRIDE; HALL MOBILITY; METALLIC FILMS; OPTOELECTRONIC DEVICES; PHOTOELECTRONS; SEMICONDUCTOR DIODES; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

CURRENT RECTIFICATIONS; HETEROJUNCTION DIODES; HEXAGONAL WURTZITE STRUCTURE; LOW TEMPERATURE PHOTOLUMINESCENCE; PREFERENTIAL ORIENTATION; RESISTIVITY MEASUREMENT; SHOCKLEY EQUATION; THERMAL ANNEALING TREATMENT;

HETEROJUNCTIONS;

GALLIUM; GALLIUM NITRIDE; INDIUM; INDIUM NITRIDE; ZINC OXIDE;

ARTICLE; CHEMISTRY; COST BENEFIT ANALYSIS; ECONOMICS; FEASIBILITY STUDY; SEMICONDUCTOR; TEMPERATURE;

COST-BENEFIT ANALYSIS; FEASIBILITY STUDIES; GALLIUM; INDIUM; SEMICONDUCTORS; TEMPERATURE; ZINC OXIDE;

EID: 84897466697     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.39.000805     Document Type: Article

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