Electrical transport properties in nitrogen-doped p-type ZnO thin film

Semiconductor Science and Technology

Volumn 21, Issue 12, 2006, Pages 1522-1526

  Xiao, Z Y ^a,b   Liu, Y C ^c   Li, B H ^a   Zhang, J Y ^a   Zhao, D X ^a   Lu, Y M ^a   Shen, D Z ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON TRANSPORT PROPERTIES; FILM GROWTH; NITROGEN; SCATTERING; ZINC OXIDE;

HALL MOBILITY; MISMATCHED SUBSTRATES; NITROGEN ACCEPTOR; THERMAL IONIZATION;

THIN FILMS;

EID: 33846883526     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/12/003     Document Type: Article

References (24)

1. Makino T, Segawa Y, Tsukazaki A, Ohtomo A and Kawasaki M 2005 Appl. Phys. Lett. 87 022101
2. Sans J A, Segura A, Mollar M and Marí B 2004 Thin Solid Films 453-454 251
3. Minegishi K, Koiwai Y and Kikuchi K 1997 Japan. J. Appl. Phys. 36 L1453
4. Liang H W, Lu Y M, Shen D Z, Liu Y C, Yan J F, Shan C X, Li B H, Zhang Z Z, Zhang J Y and Fan X W 2005 Phys. Status Solidi a 202 1060-5
5. Xiao Z Y, Liu Y C, Zhang J Y, Zhao D X, Lu Y M, Shen D Z and Fan X W 2005 Semicond. Sci. Technol. 20 796-800
6. Look D C, Reynolds D C, Litton C W, Jones R L, Eason D B and Cantwell G 2002 Appl. Phys. Lett. 81 1830
7. Ryu Y R, Lee T S and White H W 2003 Appl. Phys. Lett. 83 87
8. Tsukazaki A et al 2005 Nat. Mater. 4 42
9. Look D C, Claflin B, Alivov Y I and Park S J 2004 Phys. Status Solidi b 201 2203
10. Qian Y H and Xu Z Z 1999 Semiconductor Physics vol 6 (Beijing: Higer Education Press of China) p 132
11. Hutson A R 1957 Phys. Rev. 108 222
12. Look D C 2005 Semicond. Sci. Technol. 20 S55-61
13. zgür, Alivov Ya I, Liu C, Teke A, Reshchikov M A, Doan S, Avrutin V, Cho S J and Morkoç H 2005 J. Appl. Phys. 98 041301
14. Conwell E M and Weisskopf V F 1950 Phys. Rev. 77 388-90
15. Brooks H 1955 Advances in Electronics and Electron Physics vol 7 ed L Marton (New York: Academic) pp 85-182
16. Weimann N G and Eastman L F 1998 J. Appl. Phys. 83 3656
17. Look D C and Sizelove J R 1999 Phys. Rev. Lett. 82 1237
18. Jiang W H, Ye X L, Xu B, Xu H Z, Ding D, Liang J B and Wang Z G 2000 J. Appl. Phys. 88 2529
19. Li B S, Liu Y C, Zhi Z Z, Shen D Z, Lu Y M, Zhang J Y, Fan X W, Mu R X and Henderson D O 2003 J. Mater. Res. 18 8
20. Lu J, Zhang Y, Ye Z, Wang L and Zhao B 2003 J. Huang Mater. Lett. 57 3311
21. Nakahara K, Takasu H, Fons P, Yamada A, Iwata K, Matsubara K, Hunger R and Niki S 2001 Appl. Phys. Lett. 79 63
22. Gutowski J, Presser N and Broser I 1988 Phys. Rev. B 38 9746
23. Kim K K, Kim H S, Hwang D K, Lim J H and Park S J 2003 Appl. Phys. Lett. 83 63
24. Look D C, Renlund G M, Burgener II R H and Sizelove J R 2005 Appl. Phys. Lett. 5 5269