Evidence of strong acceptor peaks in ZnO thin films doped with phosphorus by plasma immersion ion implantation technique

Journal of Luminescence

Volumn 137, Issue , 2013, Pages 55-58

  Nagar, S ^a   Chakrabarti, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Photoluminescence; Plasma immersion ion implantation; Scanning electron microscopy; Secondary ion mass spectroscopy; Zinc Oxide

Indexed keywords

ACCEPTOR-BOUND EXCITONS; ANNEALED SAMPLES; DONOR-BOUND EXCITON; HETEROJUNCTION DIODES; P-TYPE ZNO FILM; PHOSPHORUS IONS; PLASMA IMMERSION ION IMPLANTATION; RECTIFYING BEHAVIORS; SECONDARY ION MASS SPECTROSCOPY; ZNO FILMS; ZNO THIN FILM;

ANNEALING; EXCITONS; HETEROJUNCTIONS; METALLIC FILMS; PHOSPHORUS; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DIODES; ZINC OXIDE;

ION IMPLANTATION;

EID: 84872790878     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2012.12.043     Document Type: Article

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