Compensation mechanism in N-doped ZnO nanowires

Nanotechnology

Volumn 21, Issue 24, 2010, Pages

  Gao, Jingyun ^a   Zhang, Xinzheng ^a   Sun, Yanghui ^a   Zhao, Qing ^a   Yu, Dapeng ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPENSATION MECHANISM; FIRST-PRINCIPLES CALCULATION; HYDROGEN INTERSTITIALS; LOW GROWTH TEMPERATURE; MIGRATION MECHANISMS; N-DOPED; OUT-DIFFUSION; P TYPE ZNO; P-TYPE DOPING; PHOTOLUMINESCENCE MEASUREMENTS; POST ANNEALING; RAMAN SPECTRA; ZINC POWDER; ZNO; ZNO NANOWIRES;

ASPECT RATIO; DOPING (ADDITIVES); NANOWIRES; OXYGEN; OXYGEN VACANCIES; RAMAN SPECTROSCOPY; SYNTHESIS (CHEMICAL); X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

ZINC OXIDE;

EID: 77952657335     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/24/245703     Document Type: Article

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