Realization of stable p-type ZnO thin films using Li-N dual acceptors

Journal of Alloys and Compounds

Volumn 509, Issue 35, 2011, Pages 8676-8682

  Rao, T Prasada ^a   Kumar, M C Santhosh ^a  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Electrical resistivity; Optical properties; p ZnO; Strain; Structural properties

Indexed keywords

AFM; C-AXIS ORIENTATIONS; CHEMICAL BONDING STATE; CRYSTALLINITIES; DEEP LEVEL; ELECTRICAL RESISTIVITY; HALL EFFECT MEASUREMENT; HALL MEASUREMENTS; INTRINSIC DEFECTS; LOW DENSITY; LOW-INTENSITY; NATIVE DEFECT; P TYPE ZNO THIN FILM; P-TYPE CONDUCTIVITY; P-ZNO; PL SPECTRA; ROOM TEMPERATURE; SPRAY-PYROLYSIS TECHNIQUES; UV EMISSIONS; XPS ANALYSIS; ZNO THIN FILM;

CARRIER CONCENTRATION; CHEMICAL ANALYSIS; CHEMICAL BONDS; DEFECTS; ELECTRIC CONDUCTIVITY; HALL EFFECT; LITHIUM; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; SPRAY PYROLYSIS; SURFACE ROUGHNESS; THIN FILMS; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 80051784146     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.05.094     Document Type: Article

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