Elucidating the physical property of the InGaN nanorod light-emitting diode: Large tunneling effect

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 4, 2011, Pages 985-989

  Lee, Ya Ju ^a   Lee, Chia Jung ^a   Chen, Chih Hao ^a   Lu, Tien Chang ^b   Kuo, Hao Chung ^b  

^a NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Light emitting diode (LED); nanorod; tunneling effect

Indexed keywords

CHIP SIZES; DOWN-SCALING; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; INGAN LED; INJECTED CARRIERS; ORDERS OF MAGNITUDE; SATURATED CURRENT; TUNNELING EFFECT; TUNNELING EFFECTS;

CURRENT VOLTAGE CHARACTERISTICS; DIODES; GALLIUM COMPOUNDS; LIGHT EMISSION; NANORODS; NANOWIRES; SCANNING ELECTRON MICROSCOPY;

LIGHT EMITTING DIODES;

EID: 80051676671     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2010.2064287     Document Type: Article

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