SCOPUS 정보 검색 플랫폼

Journal of Physics D: Applied Physics

Volumn 46, Issue 27, 2013, Pages

Atomic-layer-deposited (HfO2)1-x (Al 2O3)x nanolaminate films on InP with different Al2O3 contents

(4) An, Chee Hong a Mahata, Chandreswar a Byun, Young Chul a Kim, Hyoungsub a

a Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE; CURRENT CHARACTERISTIC; FREQUENCY DISPERSION; INP SUBSTRATES; INTERFACE STATE DENSITY; NANOLAMINATE FILMS; OUT-DIFFUSION;

ATOMIC LAYER DEPOSITION; DIELECTRIC PROPERTIES; HAFNIUM OXIDES; MOS CAPACITORS;

ALUMINUM;

EID: 84879970890 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/46/27/275301 Document Type: Article

Times cited : (12)

References (29)

1
- 69249119394
- 10.1557/mrs2009.136 0883-7694
- Heyns M and Tsai W 2009 MRS Bull. 34 485
- (2009) MRS Bull. , vol.34 , Issue.7 , pp. 485
- Heyns, M.¹ Tsai, W.²

2
- 46449098816
- 10.1116/1.2905246 0734-2101 A
- Ye P D 2008 J. Vac. Sci. Technol. A 26 697
- (2008) J. Vac. Sci. Technol. , vol.26 , Issue.4 , pp. 697
- Ye, P.D.¹

3
- 34547912197
- Electrical and interfacial characterization of atomic layer deposited high-Κ gate dielectrics on GaAs for advanced CMOS devices
- DOI 10.1109/TED.2007.901261
- Dalapati G K, Tong Y, Loh W-Y, Mun H K and Cho B J 2007 IEEE Trans. Electron Devices 54 1831 (Pubitemid 47260257)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.8 , pp. 1831-1837
- Dalapati, G.K.¹ Tong, Y.² Loh, W.-Y.³ Mun, H.-K.⁴ Cho, B.J.⁵

4
- 80555145169
- 10.1063/1.3656001 0003-6951 172901
- Galatage R V, Dong H, Zhernokletov D M, Brennan B, Hinkle C L, Wallace R M and Vogel E M 2011 Appl. Phys. Lett. 99 172901
- (2011) Appl. Phys. Lett. , vol.99 , Issue.17
- Galatage, R.V.¹ Dong, H.² Zhernokletov, D.M.³ Brennan, B.⁴ Hinkle, C.L.⁵ Wallace, R.M.⁶ Vogel, E.M.⁷

5
- 84860672827
- 10.1002/pssr.201206109 1862-6254 R
- An C-H, Byun Y-C, Lee M S and Kim H 2012 Phys. Status Solidi R 6 211
- (2012) Phys. Status Solidi , vol.6 , Issue.5 , pp. 211
- An, C.-H.¹ Byun, Y.-C.² Lee, M.S.³ Kim, H.⁴

6
- 84859542288
- 10.1063/1.3698095 0003-6951 132906
- Suzuki R et al 2012 Appl. Phys. Lett. 100 132906
- (2012) Appl. Phys. Lett. , vol.100 , Issue.13
- Suzuki, R.¹

7
- 79961038335
- 10.1063/1.3617436 0003-6951 042908
- Chu L K, Merckling C, Alian A, Dekoster J, Kwo J, Hong M, Caymax M and Heyns M 2011 Appl. Phys. Lett. 99 042908
- (2011) Appl. Phys. Lett. , vol.99 , Issue.4
- Chu, L.K.¹ Merckling, C.² Alian, A.³ Dekoster, J.⁴ Kwo, J.⁵ Hong, M.⁶ Caymax, M.⁷ Heyns, M.⁸

8
- 84905936695
- 10.1116/1.3532826 1071-1023 B 01A807
- Monaghan S, O'Mahony A, Cherlaoui K, O'Connor E, Povey I M, Nolan M G, O'Connell D, Pemble M E and Hurley P K 2011 J. Vac. Sci. Technol. B 29 01A807
- (2011) J. Vac. Sci. Technol. , vol.29 , Issue.1
- Monaghan, S.¹ O'Mahony, A.² Cherlaoui, K.³ O'Connor, E.⁴ Povey, I.M.⁵ Nolan, M.G.⁶ O'Connell, D.⁷ Pemble, M.E.⁸ Hurley, P.K.⁹

9
- 34948821305
- Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited Hf O2 Al2 O3 nanolaminate gate dielectric
- DOI 10.1063/1.2798499
- Yang T, Xuan Y, Zemlyanov D, Shen T, Wu Y Q, Woodall J M, Ye P D, Aguirre-Tostado F S, Milojevic M, McDonnell S and Wallace R M 2007 Appl. Phys. Lett. 91 142122 (Pubitemid 47531521)
- (2007) Applied Physics Letters , vol.91 , Issue.14 , pp. 142122
- Yang, T.¹ Xuan, Y.² Zemlyanov, D.³ Shen, T.⁴ Wu, Y.Q.⁵ Woodall, J.M.⁶ Ye, P.D.⁷ Aguirre-Tostado, F.S.⁸ Milojevic, M.⁹ Mcdonnell, S.¹⁰ Wallace, R.M.¹¹

10
- 56249098317
- 10.1063/1.3007978 0003-6951 193504
- Suri R, Lee B, Lichtenwalner D J, Biswas N and Misra V 2008 Appl. Phys. Lett. 93 193504
- (2008) Appl. Phys. Lett. , vol.93 , Issue.19
- Suri, R.¹ Lee, B.² Lichtenwalner, D.J.³ Biswas, N.⁴ Misra, V.⁵

11
- 77951213078
- 0268-1242 055012
- Gong Y-P, Li A-D, Li X-F, Li H, Zhai H-F and Wu D 2010 Semicond. Sci. Technol. 25 055012
- (2010) Semicond. Sci. Technol. , vol.25 , Issue.5
- Gong, Y.-P.¹ Li, A.-D.² Li, X.-F.³ Li, H.⁴ Zhai, H.-F.⁵ Wu, D.⁶

12
- 84866342452
- 10.1088/0268-1242/27/10/105026 0268-1242 105026
- Byun Y-C, Mahata C, An C-H and Kim H 2012 Semicond. Sci. Technol. 27 105026
- (2012) Semicond. Sci. Technol. , vol.27 , Issue.10
- Byun, Y.-C.¹ Mahata, C.² An, C.-H.³ Kim, H.⁴

13
- 84862970420
- 10.1149/2.001203esl 1099-0062
- Wang C, Xu M, Gu J, Zhang D W and Ye P D 2012 Electrochem. Solid-State Lett. 15 H51
- (2012) Electrochem. Solid-State Lett. , vol.15 , Issue.3 , pp. 51
- Wang, C.¹ Xu, M.² Gu, J.³ Zhang, D.W.⁴ Ye, P.D.⁵

14
- 84957225568
- 10.1116/1.572928 0734-2101 A
- Hollinger G, Bergignat E, Joseph J and Robach Y 1985 J. Vac. Sci. Technol. A 3 2082
- (1985) J. Vac. Sci. Technol. , vol.3 , Issue.6 , pp. 2082
- Hollinger, G.¹ Bergignat, E.² Joseph, J.³ Robach, Y.⁴

15
- 39749157907
- GaAs interfacial self-cleaning by atomic layer deposition
- DOI 10.1063/1.2883956
- Hinkle C L et al 2008 Appl. Phys. Lett. 92 071901 (Pubitemid 351304840)
- (2008) Applied Physics Letters , vol.92 , Issue.7 , pp. 071901
- Hinkle, C.L.¹ Sonnet, A.M.² Vogel, E.M.³ McDonnell, S.⁴ Hughes, G.J.⁵ Milojevic, M.⁶ Lee, B.⁷ Aguirre-Tostado, F.S.⁸ Choi, K.J.⁹ Kim, H.C.¹⁰ Kim, J.¹¹ Wallace, R.M.¹²

16
- 33947173848
- 2 for gate dielectric applications
- DOI 10.1149/1.2472562
- Chiou Y-K, Chang C-H, Wang C-C, Lee K-Y, Wu T-B, Kwo R and Hong M 2007 J. Electrochem. Soc. 154 G99 (Pubitemid 46398557)
- (2007) Journal of the Electrochemical Society , vol.154 , Issue.4
- Chiou, Y.-K.¹ Chang, C.-H.² Wang, C.-C.³ Lee, K.-Y.⁴ Wu, T.-B.⁵ Kwo, R.⁶ Hong, M.⁷

17
- 8744282729
- Standardless XPS method for determining the chemical composition of multiphase compounds and its application to studies of InP plasma oxide nanofilms
- DOI 10.1134/1.1809414
- Mikushkin V M, Sysoev S E and Gordeev Y S 2004 Phys. Solid State 46 1770 (Pubitemid 39526356)
- (2004) Physics of the Solid State , vol.46 , Issue.10 , pp. 1830-1835
- Mikushkin, V.M.¹ Sysoev, S.E.² Gordeev, Yu.S.³

18
- 0009423518
- 10.1063/1.365263 0021-8979
- Han I K, Kim E K, Lee J I, Kim S H, Kang K N, Kim Y, Lim H and Park H L 1997 J. Appl. Phys. 81 6986
- (1997) J. Appl. Phys. , vol.81 , Issue.10 , pp. 6986
- Han, I.K.¹ Kim, E.K.² Lee, J.I.³ Kim, S.H.⁴ Kang, K.N.⁵ Kim, Y.⁶ Lim, H.⁷ Park, H.L.⁸

19
- 78149440958
- 10.1063/1.3506695 0003-6951 172108
- Kang Y S, Kim C Y, Cho M-H, Chung K B, An C-H, Kim H, Lee H J, Kim C S and Lee T G 2010 Appl. Phys. Lett. 97 172108
- (2010) Appl. Phys. Lett. , vol.97 , Issue.17
- Kang, Y.S.¹ Kim, C.Y.² Cho, M.-H.³ Chung, K.B.⁴ An, C.-H.⁵ Kim, H.⁶ Lee, H.J.⁷ Kim, C.S.⁸ Lee, T.G.⁹

20
- 84862250896
- 10.1002/pssr.201206178 1862-6254 R
- An C-H, Byun Y-C, Cho M-H and Kim H 2012 Phys. Status Solidi R 6 247
- (2012) Phys. Status Solidi , vol.6 , Issue.6 , pp. 247
- An, C.-H.¹ Byun, Y.-C.² Cho, M.-H.³ Kim, H.⁴

21
- 75749127285
- 10.1063/1.3281027 0003-6951 012906
- Kim E J, Wang L, Asbeck P M, Saraswat K C and McIntyre P C 2010 Appl. Phys. Lett. 96 012906
- (2010) Appl. Phys. Lett. , vol.96 , Issue.1
- Kim, E.J.¹ Wang, L.² Asbeck, P.M.³ Saraswat, K.C.⁴ McIntyre, P.C.⁵

22
- 34248630525
- Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics
- DOI 10.1016/j.mee.2007.04.039, PII S0167931707003899, INFOS 2007
- Martens K, Wang W, De Keersmaecker K, Borghs G, Groeseneken G and Maes H 2007 Microelectron. Eng. 84 2146 (Pubitemid 46776960)
- (2007) Microelectronic Engineering , vol.84 , Issue.9-10 , pp. 2146-2149
- Martens, K.¹ Wang, W.² De Keersmaecker, K.³ Borghs, G.⁴ Groeseneken, G.⁵ Maes, H.⁶

23
- 0036863349
- 10.1109/LED.2002.805000 0741-3106
- Zhu W J, Tamagawa T, Gibson M, Furukawa T and Ma T P 2002 IEEE Electron Devices Lett. 23 649
- (2002) IEEE Electron Devices Lett. , vol.23 , Issue.11 , pp. 649
- Zhu, W.J.¹ Tamagawa, T.² Gibson, M.³ Furukawa, T.⁴ Ma, T.P.⁵

24
- 0000254929
- 10.1063/1.361002 0021-8979
- Fleetwood D M and Saks N S 1996 J. Appl. Phys. 79 1583
- (1996) J. Appl. Phys. , vol.79 , Issue.3 , pp. 1583
- Fleetwood, D.M.¹ Saks, N.S.²

25
- 84870880539
- 10.1063/1.4763478 0021-8979 094501
- Rahman M S, Evangelou E K, Konofaos N and Dimoulas A 2012 J. Appl. Phys. 112 094501
- (2012) J. Appl. Phys. , vol.112 , Issue.9
- Rahman, M.S.¹ Evangelou, E.K.² Konofaos, N.³ Dimoulas, A.⁴

26
- 78650866081
- 10.1063/1.3520431 0021-8979 124101
- Engel-Herbert R, Hwang Y and Stemmer S 2010 J. Appl. Phys. 108 124101
- (2010) J. Appl. Phys. , vol.108 , Issue.12
- Engel-Herbert, R.¹ Hwang, Y.² Stemmer, S.³

27
- 65249175032
- 10.1063/1.3113523 0003-6951 153508
- Lin H C, Brammertz G, Martens K, Valicourt G, Negre L, Wang W-E, Tsai W, Meuris M and Heyns M 2009 Appl. Phys. Lett. 94 153508
- (2009) Appl. Phys. Lett. , vol.94 , Issue.15
- Lin, H.C.¹ Brammertz, G.² Martens, K.³ Valicourt, G.⁴ Negre, L.⁵ Wang, W.-E.⁶ Tsai, W.⁷ Meuris, M.⁸ Heyns, M.⁹

28
- 79955987885
- 1-x on (100) Si
- DOI 10.1063/1.1492024
- Yu H Y, Li M F, Cho B J, Yeo C C, Joo M S, Kwong D-L, Pan J S, Ang C H, Zheng J Z and Ramanathan S 2002 Appl. Phys. Lett. 81 376 (Pubitemid 34803052)
- (2002) Applied Physics Letters , vol.81 , Issue.2 , pp. 376
- Yu, H.Y.¹ Li, M.F.² Cho, B.J.³ Yeo, C.C.⁴ Joo, M.S.⁵ Kwong, D.-L.⁶ Pan, J.S.⁷ Ang, C.H.⁸ Zheng, J.Z.⁹ Ramanathan, S.¹⁰

29
- 79551652690
- 10.1116/1.3521501 1071-1023 B 01AA03
- Paskaleva A, Lemberger M, Atanassova E and Bauer A J 2011 J. Vac. Sci. Technol. B 29 01AA03
- (2011) J. Vac. Sci. Technol. , vol.29 , Issue.1
- Paskaleva, A.¹ Lemberger, M.² Atanassova, E.³ Bauer, A.J.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.