Thermal instability of HfO 2 on InP structure with ultrathin Al 2O 3 interface passivation layer

Physica Status Solidi - Rapid Research Letters

Volumn 6, Issue 6, 2012, Pages 247-249

  An, Chee Hong ^a   Byun, Young Chul ^a   Cho, Mann Ho ^b   Kim, Hyoungsub ^a  

^a Sungkyunkwan University   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Al 2O 3; HfO 2; InP; Interface layers; Thermal stability

Indexed keywords

ELECTRICAL ANALYSIS; HFO 2; INP; INTERFACE LAYER; INTERFACE PASSIVATION; OUT-DIFFUSION; POST-DEPOSITION ANNEAL; THERMAL INSTABILITIES; ULTRA-THIN;

CHEMICAL ANALYSIS; HAFNIUM OXIDES; PASSIVATION; THERMODYNAMIC STABILITY;

ALUMINUM;

EID: 84862250896     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201206178     Document Type: Article

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