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Volumn 15, Issue 4, 2012, Pages

Interfacial reactions between HfO 2 films prepared by atomic-layer-deposition and an InP substrate using postnitridation with NH 3 vapor

(9) Kang, Y S a Kim, C Y a Cho, M H a An, C H b Kim, H b Seo, J H c Kim, C S d Lee, T G d Ko, D H a

a Yonsei University (South Korea)

b Sungkyunkwan University (South Korea)

c Korea Basic Science Institute (KBSI) (South Korea)

d Korea Research Institute of Standards and Science (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ANNEALING TREATMENTS; ATOMIC LAYER DEPOSITED; INN LAYERS; INP; INP SUBSTRATES; INTERFACIAL OXIDES; OXYGEN IMPURITY; P-OXIDE; POST-NITRIDATION; RE-OXIDATION;

RAPID THERMAL ANNEALING; VAPORS;

HAFNIUM OXIDES;

EID: 84863164907 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/2.008204esl Document Type: Article

Times cited : (10)

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