Effects of SF 6 plasma treatment on electrical characteristics of TaN-Al 2O 3-InP metal-oxide-semiconductor field-effect transistor

Applied Physics Letters

Volumn 101, Issue 6, 2012, Pages

  Wang, Yanzhen ^a   Chen, Yen Ting ^a   Xue, Fei ^a   Zhou, Fei ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITY; DRIVE CURRENTS; ELECTRICAL CHARACTERISTIC; INP; INP SUBSTRATES; INTERFACE TRAP DENSITY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; OPTIMAL POWER; OPTIMAL TIME; PLASMA TREATMENT; SUBTHRESHOLD SWING;

MOSFET DEVICES; OPTIMIZATION; PLASMA APPLICATIONS; SULFUR HEXAFLUORIDE; TANTALUM COMPOUNDS;

ALUMINUM;

EID: 84865132339     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4745203     Document Type: Article

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