Molecular beam epitaxy of ultra-high-quality algaas/GaAs heterostructures: Enabling physics in low-dimensional electronic systems

Annual Review of Condensed Matter Physics

Volumn 5, Issue 1, 2014, Pages 347-373

  Manfra, Michael J ^a  

^a Purdue University   (United States)

Author keywords

molecular beam epitaxy; two dimensional electron gas

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; ELECTRON GAS; ELECTRON-ELECTRON INTERACTIONS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; TWO DIMENSIONAL;

CONDENSED MATTER; ELECTRONIC SYSTEMS; HETEROSTRUCTURE DESIGNS; HIGH MOBILITY; LATEST DEVELOPMENT; MATERIAL QUALITY; THIN-FILM DEPOSITION TECHNIQUE; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

HETEROJUNCTIONS;

EID: 84896386427     PISSN: 19475454     EISSN: 19475462     Source Type: Journal    
DOI: 10.1146/annurev-conmatphys-031113-133905     Document Type: Article

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