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Volumn 84, Issue 25, 2000, Pages 5808-5811
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Resonantly enhanced tunneling in a double layer quantum hall ferromagnet
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRON RESONANCE;
ELECTRON TRANSITIONS;
ELECTRON TUNNELING;
FERROMAGNETISM;
GROUND STATE;
MAGNETIC FIELDS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR QUANTUM WELLS;
SPECTROSCOPY;
TEMPERATURE;
BROKEN SYMMETRY GROUND STATE;
DOUBLE LAYER QUANTUM HALL FERROMAGNET;
LANDAU LEVEL FILLING;
QUANTIZED HALL EFFECT STATE;
TEMPERATURE DEPENDENCE;
TUNNELING CONDUCTANCE;
TUNNELING SPECTROSCOPY;
HALL EFFECT;
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EID: 2942632542
PISSN: 00319007
EISSN: None
Source Type: Journal
DOI: 10.1103/PhysRevLett.84.5808 Document Type: Article |
Times cited : (539)
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References (7)
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