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Volumn 83, Issue 24, 2011, Pages

Scattering mechanisms in a high-mobility low-density carbon-doped (100) GaAs two-dimensional hole system

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Indexed keywords


EID: 79961244793     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.241305     Document Type: Article
Times cited : (22)

References (20)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.