Carbon-doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 106 cm2/V s

Applied Physics Letters

Volumn 86, Issue 25, 2005, Pages 1-3

  Gerl, C ^a   Schmult, S ^a   Tranitz, H P ^a   Mitzkus, C ^a   Wegscheider, W ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRON GAS; HALL EFFECT; HOLE MOBILITY; LOW TEMPERATURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

CARBON FILAMENTS (CF); HETEROSYSTEMS; QUANTUM HALL EFFECT (QHE); TWO-DIMENSIONAL ELECTRON GAS (2DEG);

SEMICONDUCTOR QUANTUM WELLS;

EID: 24344480080     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1949292     Document Type: Article

References (17)

1. M. A. Zudov, R. R. Du, L. N. Pfeiffer, and K. W. West, Phys. Rev. Lett. 90, 046807 (2003).
2. J. P. Eisenstein and H. L. Stormer, Science 248, 1510 (1990).
3. M. P. Lilly, K. B. Cooper, J. P. Eisenstein, L. N. Pfeiffer, and K. W. West, Phys. Rev. Lett. 82, 394 (1999).
4. M. Kellogg, J. P. Eisenstein, L. N. Pfeiffer, and K. W. West, Phys. Rev. Lett. 93, 036801 (2004).
5. R. G. Mani, J. H. Smet, K. v. Klitzing, V. Narayanamurti, W. B. Johnson, and V. Umansky, Nature (London) 420, 646 (2002).
6. M. Henini, P. J. Rodgers, P. A. Crump, B. L. Gallagher, and G. Hill, J. Cryst. Growth 150, 446 (1995).
7. J. J. Heremans, M. B. Santos, and M. Shayegan, Appl. Phys. Lett. 61, 1652 (1992).
8. H. C. Manoharan and M. Shayegan, Phys. Rev. B 50, 17662 (1994).
9. M. Shayegan, H. C. Manoharan, S. J. Papadakis, and E. P. De Poortere, Physica E (Amsterdam) 6, 40 (2000).
10. E. Tutuc, M. Shayegan, and D. A. Huse, Phys. Rev. Lett. 93, 036802 (2004).
11. S. V. Ivanov, P. S. Kop'ev, and N. N. Ledentsov, J. Cryst. Growth 108, 661 (1991).
12. D. Reuter and A. D. Wieck, Rev. Sci. Instrum. 70, 3435 (1999).
13. B. Grbic, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, and A. D. Wieck, Appl. Phys. Lett. 85, 12 (2004).
14. Modified SUKO40 carbon source fabricated by Dr. Eberl MBE-Komponenten GmbH, Gutenbergstrasse 8, D-71263 Weil der Stadt, Germany (http://www.mbe-kompo. de).
15. Y. Iye, E. E. Mentez, W. I. Wang, and L. Esaki, Phys. Rev. B 33, 5854 (1986).
16. S. J. Papadakis, E. P. De Poortere, H. C. Manoharan, M. Shayegan, and R. Winkler, Science 283, 2056 (1999).
17. After submission of this manuscript the growth of high mobility carbon doped 2DHSs on (001) GaAs substrates was reported in M. J. Mantra, L. N. Pfeiffer, K. W. West, R. de Picciotto, and K. W. Baldwin, Appl. Phys. Lett. 86, 162106 (2005).